| Reference Type | Journal (article/letter/editorial) |
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| Title | Study of interface formation on the cleavage surfaces ofA3{B}6layered semiconductors |
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| Journal | Journal of Physics D: Applied Physics |
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| Authors | Galiy, P V | Author |
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| Nenchuk, T M | Author |
| Stakhira, J M | Author |
| Year | 2001 (January 7) | Volume | 34 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/0022-3727/34/1/304Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5668416 | Long-form Identifier | mindat:1:5:5668416:8 |
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|
| GUID | 0 |
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| Full Reference | Galiy, P V, Nenchuk, T M, Stakhira, J M (2001) Study of interface formation on the cleavage surfaces ofA3{B}6layered semiconductors. Journal of Physics D: Applied Physics, 34. 18-24 doi:10.1088/0022-3727/34/1/304 |
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| Plain Text | Galiy, P V, Nenchuk, T M, Stakhira, J M (2001) Study of interface formation on the cleavage surfaces ofA3{B}6layered semiconductors. Journal of Physics D: Applied Physics, 34. 18-24 doi:10.1088/0022-3727/34/1/304 |
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| In | (2000) Journal of Physics D: Applied Physics Vol. 34. IOP Publishing |
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