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Huang, Z, Donohue, P P, Todd, M A, Jones, J C, Whatmore, R W (2001) Sputtered lead scandium tantalate thin films: crystallization behaviour during post-deposition annealing. Journal of Physics D: Applied Physics, 34. 3121-3129 doi:10.1088/0022-3727/34/21/304

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Reference TypeJournal (article/letter/editorial)
TitleSputtered lead scandium tantalate thin films: crystallization behaviour during post-deposition annealing
JournalJournal of Physics D: Applied Physics
AuthorsHuang, ZAuthor
Donohue, P PAuthor
Todd, M AAuthor
Jones, J CAuthor
Whatmore, R WAuthor
Year2001 (November 7)Volume34
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/34/21/304Search in ResearchGate
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Mindat Ref. ID5668747Long-form Identifiermindat:1:5:5668747:5
GUID0
Full ReferenceHuang, Z, Donohue, P P, Todd, M A, Jones, J C, Whatmore, R W (2001) Sputtered lead scandium tantalate thin films: crystallization behaviour during post-deposition annealing. Journal of Physics D: Applied Physics, 34. 3121-3129 doi:10.1088/0022-3727/34/21/304
Plain TextHuang, Z, Donohue, P P, Todd, M A, Jones, J C, Whatmore, R W (2001) Sputtered lead scandium tantalate thin films: crystallization behaviour during post-deposition annealing. Journal of Physics D: Applied Physics, 34. 3121-3129 doi:10.1088/0022-3727/34/21/304
In(2000) Journal of Physics D: Applied Physics Vol. 34. IOP Publishing

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Huang, Z, Battat, J, Donohue, P P, Todd, M A, Whatmore, R W (2003) On the phase transformation kinetics in lead scandium tantalate thin films. Journal of Physics D: Applied Physics, 36. 3039-3046 doi:10.1088/0022-3727/36/23/026
Huang, Z, Donohue, P P, Zhang, Q, Williams, D J, Anthony, C J, Whatmore, R W, Todd, M A (2003) Comparative microstructure and electrical property studies of lead scandium tantalate thin films as prepared by LDCVD, sol gel and sputtering techniques. Journal of Physics D: Applied Physics, 36. 270-279 doi:10.1088/0022-3727/36/3/309
Whatmore, R. W., Huang, Z., Todd, M. (1997) Sputtered lead scandium tantalate thin films: Pb4+ in B sites in the perovskite structure. Journal of Applied Physics, 82 (11). 5686-5694 doi:10.1063/1.366432
Zhang, Q, Whatmore, R W (2001) Sol-gel PZT and Mn-doped PZT thin films for pyroelectric applications. Journal of Physics D: Applied Physics, 34. 2296-2301 doi:10.1088/0022-3727/34/15/308
Southin, J E A, Wilson, S A, Schmitt, D, Whatmore, R W (2001) e31,fdetermination for PZT films using a conventional `d33' meter. Journal of Physics D: Applied Physics, 34. 1456-1460 doi:10.1088/0022-3727/34/10/303
Groves, P (1985) Low-temperature studies of ferroelectric lead scandium tantalate. Journal of Physics C: Solid State Physics, 18 (34). doi:10.1088/0022-3719/18/34/002
Henry, J, Livingstone, J (2001) Sputtered a-Si:H thin-film position sensitive detectors. Journal of Physics D: Applied Physics, 34. 1939-1942 doi:10.1088/0022-3727/34/13/301
Bacaksiz, E, Novruzov, V, Karal, H, Yanmaz, E, Altunbas, M, Kopya, A I (2001) Light-assisted deposition of CdS thin films. Journal of Physics D: Applied Physics, 34. 3109-3112 doi:10.1088/0022-3727/34/21/302
Moshfegh, A Z, Akhavan, O (2001) Retardation of Ta silicidation by bias sputtering in Cu/Ta/Si(111) thin films. Journal of Physics D: Applied Physics, 34. 2103-2108 doi:10.1088/0022-3727/34/14/304
Chen, T P, Tse, M S, Sun, C Q, Fung, S, Lo, K F (2001) Snapback behaviour and its similarity to the switching behaviour in ultra-thin silicon dioxide films after hard breakdown. Journal of Physics D: Applied Physics, 34. doi:10.1088/0022-3727/34/17/101
Feng, P X, Riley, J D, Leckey, R C G, Ley, L (2001) MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates. Journal of Physics D: Applied Physics, 34. 1293-1300 doi:10.1088/0022-3727/34/9/303
 
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