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Seppälä, A, Rauhala, E, Grötzschel, R (2001) Lattice location of implanted tellurium in GaN heteroepitaxial films. Journal of Physics D: Applied Physics, 34. 269-272 doi:10.1088/0022-3727/34/3/303

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Reference TypeJournal (article/letter/editorial)
TitleLattice location of implanted tellurium in GaN heteroepitaxial films
JournalJournal of Physics D: Applied Physics
AuthorsSeppälä, AAuthor
Rauhala, EAuthor
Grötzschel, RAuthor
Year2001 (February 7)Volume34
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/34/3/303Search in ResearchGate
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Mindat Ref. ID5668819Long-form Identifiermindat:1:5:5668819:1
GUID0
Full ReferenceSeppälä, A, Rauhala, E, Grötzschel, R (2001) Lattice location of implanted tellurium in GaN heteroepitaxial films. Journal of Physics D: Applied Physics, 34. 269-272 doi:10.1088/0022-3727/34/3/303
Plain TextSeppälä, A, Rauhala, E, Grötzschel, R (2001) Lattice location of implanted tellurium in GaN heteroepitaxial films. Journal of Physics D: Applied Physics, 34. 269-272 doi:10.1088/0022-3727/34/3/303
In(2000) Journal of Physics D: Applied Physics Vol. 34. IOP Publishing

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