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Mavi, H S, Rasheed, B G, Shukla, A K, Abbi, S C, Jain, K P (2001) Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon. Journal of Physics D: Applied Physics, 34. 292-298 doi:10.1088/0022-3727/34/3/307

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Reference TypeJournal (article/letter/editorial)
TitleSpectroscopic investigations of porous silicon prepared by laser-induced etching of silicon
JournalJournal of Physics D: Applied Physics
AuthorsMavi, H SAuthor
Rasheed, B GAuthor
Shukla, A KAuthor
Abbi, S CAuthor
Jain, K PAuthor
Year2001 (February 7)Volume34
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/34/3/307Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5668823Long-form Identifiermindat:1:5:5668823:4
GUID0
Full ReferenceMavi, H S, Rasheed, B G, Shukla, A K, Abbi, S C, Jain, K P (2001) Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon. Journal of Physics D: Applied Physics, 34. 292-298 doi:10.1088/0022-3727/34/3/307
Plain TextMavi, H S, Rasheed, B G, Shukla, A K, Abbi, S C, Jain, K P (2001) Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon. Journal of Physics D: Applied Physics, 34. 292-298 doi:10.1088/0022-3727/34/3/307
In(2000) Journal of Physics D: Applied Physics Vol. 34. IOP Publishing

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Mavi, H. S., Shukla, A. K., Jain, K. P., Abbi, S. C., Beserman, R. (1991) Raman study of stress‐relieved silicon‐on‐sapphire films prepared by cw‐laser annealing. Journal of Applied Physics, 69 (11). 7815-7819 doi:10.1063/1.347511
Bera, S K, Chaudhuri, S, Bandyopadhyay, A K, Chakraborty, B R, Pal, A K (2001) Quantum size effect in silicon nanocrystals prepared by dc magnetron sputtering. Journal of Physics D: Applied Physics, 34. 273-278 doi:10.1088/0022-3727/34/3/304
Mavi, H. S., Jain, K. P., Shukla, A. K., Abbi, S. C., Beserman, R. (1991) Raman study of cw laser‐induced crystallization ofa‐Si:H films on quartz and sapphire substrates. Journal of Applied Physics, 69 (6). 3696-3701 doi:10.1063/1.348462
Mavi, H. S., Shukla, A. K., Abbi, S. C., Jain, K. P. (1989) Raman study of amorphous to microcrystalline phase transition in cw laser annealeda‐Si:H films. Journal of Applied Physics, 66 (11). 5322-5326 doi:10.1063/1.343723
Mavi, H.S., Rasheed, B.G., Shukla, A.K., Abbi, S.C., Jain, K.P. (2001) Photoluminescence study of Nd:YAG laser-etched silicon. Journal of Non-Crystalline Solids, 286 (3) 162-168 doi:10.1016/s0022-3093(01)00519-1
Jackson, S M, Reed, G T, Way, A S, Kirkby, K J (2001) Formation of planar waveguides by implantation of O into cubic silicon carbide. Journal of Physics D: Applied Physics, 34. 257-268 doi:10.1088/0022-3727/34/3/302
Choudhury, P, Sukla, A K, Mavi, H S, Jain, K P, Abbi, S C, Mandal, P, Poddar, A, Das, A N, Ghosh, B (1988) Raman study of the high-Tcsuperconductors ABa2Cu3O7-x(A=Y, Ho, Y0.1Gd0.9and Y0.9Sm0.1). Journal of Physics C: Solid State Physics, 21 (3). doi:10.1088/0022-3719/21/3/001
Summers, S, Reehal, H S, Shirkoohi, G H (2001) The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD. Journal of Physics D: Applied Physics, 34. 2782-2791 doi:10.1088/0022-3727/34/18/311
Sama, S, Ferrero, C, Lequien, S, Milita, S, Romestain, R, Servidori, M, Setzu, S, Thiaudière, D (2001) Porous silicon characterization by x-ray reflectivity: problems arising from using a vacuum environment with synchrotron beam. Journal of Physics D: Applied Physics, 34. 841-845 doi:10.1088/0022-3727/34/6/301
Pal, S, Banerjee, S (2001) Friction-induced microstructure growth. Journal of Physics D: Applied Physics, 34. 253-256 doi:10.1088/0022-3727/34/3/301
McAuley, S A, Ashraf, H, Atabo, L, Chambers, A, Hall, S, Hopkins, J, Nicholls, G (2001) Silicon micromachining using a high-density plasma source. Journal of Physics D: Applied Physics, 34. 2769-2774 doi:10.1088/0022-3727/34/18/309
 
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