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Hadjadj, A, Beorchia, A, Cabarrocas, P Roca i, Boufendi, L, Huet, S, Bubendorff, J L (2001) Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films. Journal of Physics D: Applied Physics, 34. 690-699 doi:10.1088/0022-3727/34/5/305

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Reference TypeJournal (article/letter/editorial)
TitleEffects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films
JournalJournal of Physics D: Applied Physics
AuthorsHadjadj, AAuthor
Beorchia, AAuthor
Cabarrocas, P Roca iAuthor
Boufendi, LAuthor
Huet, SAuthor
Bubendorff, J LAuthor
Year2001 (March 7)Volume34
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/34/5/305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5668883Long-form Identifiermindat:1:5:5668883:6
GUID0
Full ReferenceHadjadj, A, Beorchia, A, Cabarrocas, P Roca i, Boufendi, L, Huet, S, Bubendorff, J L (2001) Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films. Journal of Physics D: Applied Physics, 34. 690-699 doi:10.1088/0022-3727/34/5/305
Plain TextHadjadj, A, Beorchia, A, Cabarrocas, P Roca i, Boufendi, L, Huet, S, Bubendorff, J L (2001) Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films. Journal of Physics D: Applied Physics, 34. 690-699 doi:10.1088/0022-3727/34/5/305
In(2000) Journal of Physics D: Applied Physics Vol. 34. IOP Publishing

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Kennedy, R J, Madden, R, Stampe, P A (2001) Effects of substrate temperature on the growth and properties of SrRuO3and CaRuO3thin films. Journal of Physics D: Applied Physics, 34. 1853-1861 doi:10.1088/0022-3727/34/12/314
Ebothe, J, Kityk, I V, Cabarrocas, P Roca i, Godet, C, Equer, B (2003) Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films. Journal of Physics D: Applied Physics, 36. 713-718 doi:10.1088/0022-3727/36/6/313
Viera, G., Mikikian, M., Bertran, E., Cabarrocas, P. Roca i, Boufendi, L. (2002) Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas. Journal of Applied Physics, 92 (8). 4684-4694 doi:10.1063/1.1506382
Hazra, S, Gibaud, A, Sella, C (2001) Influence of substrate roughness on the layering of particles in nanocermet thin films. Journal of Physics D: Applied Physics, 34. 1575-1578 doi:10.1088/0022-3727/34/11/303
Barradas, N P (2001) Rutherford backscattering analysis of thin films and superlattices with roughness. Journal of Physics D: Applied Physics, 34. 2109-2116 doi:10.1088/0022-3727/34/14/305
Feng, P X, Riley, J D, Leckey, R C G, Ley, L (2001) MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates. Journal of Physics D: Applied Physics, 34. 1293-1300 doi:10.1088/0022-3727/34/9/303
Summers, S, Reehal, H S, Shirkoohi, G H (2001) The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD. Journal of Physics D: Applied Physics, 34. 2782-2791 doi:10.1088/0022-3727/34/18/311
Hadjadj, A., Bubendorff, J.-L., Boufendi, L., Beorchia, A. (2003) Lowering of the laser crystallization threshold of a-Si:H due to the presence of Si clusters at the surface. Applied Surface Science, 208. 272-276 doi:10.1016/s0169-4332(02)01351-x
Pham, N., Roca I Cabarrocas, P., Hadjadj, A., Beorchia, A., Kail, F., Chahed, L. (2008) Hydrogen evolution during deposition of microcrystalline silicon by chemical transport. Philosophical Magazine, 88 (3). 297-311 doi:10.1080/14786430701823213
Vignoli, S, Mélinon, P, Masenelli, B, Cabarrocas, P Roca i, Flank, A M, Longeaud, C (2005) Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties. Journal of Physics: Condensed Matter, 17 (8). 1279-1288 doi:10.1088/0953-8984/17/8/006
Kleider, J. P., Longeaud, C., Barranco‐Diaz, M., Morin, P., Roca i Cabarrocas, P. (1995) Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates. Journal of Applied Physics, 78 (1). 317-320 doi:10.1063/1.360678
 
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