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Sherstnev, V V, Krier, A, Hill, G (2002) High tunability and superluminescence in InAs mid-infrared light emitting diodes. Journal of Physics D: Applied Physics, 35. 196-198 doi:10.1088/0022-3727/35/3/306

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Reference TypeJournal (article/letter/editorial)
TitleHigh tunability and superluminescence in InAs mid-infrared light emitting diodes
JournalJournal of Physics D: Applied Physics
AuthorsSherstnev, V VAuthor
Krier, AAuthor
Hill, GAuthor
Year2002 (February 7)Volume35
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/35/3/306Search in ResearchGate
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Mindat Ref. ID5669384Long-form Identifiermindat:1:5:5669384:7
GUID0
Full ReferenceSherstnev, V V, Krier, A, Hill, G (2002) High tunability and superluminescence in InAs mid-infrared light emitting diodes. Journal of Physics D: Applied Physics, 35. 196-198 doi:10.1088/0022-3727/35/3/306
Plain TextSherstnev, V V, Krier, A, Hill, G (2002) High tunability and superluminescence in InAs mid-infrared light emitting diodes. Journal of Physics D: Applied Physics, 35. 196-198 doi:10.1088/0022-3727/35/3/306
In(2000) Journal of Physics D: Applied Physics Vol. 35. IOP Publishing

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Krier, A, Sherstnev, V V (2003) The influence of melt purification and structure defects on mid-infrared light emitting diodes. Journal of Physics D: Applied Physics, 36. 1484-1488 doi:10.1088/0022-3727/36/13/309
Sherstnev, V. V., Monahov, A. M., Krier, A., Hill, G. (2000) Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. Applied Physics Letters, 77 (24). 3908-3910 doi:10.1063/1.1332980
Krier, A, Sherstnev, V V (2000) Powerful interface light emitting diodes for methane gas detection. Journal of Physics D: Applied Physics, 33. 101-106 doi:10.1088/0022-3727/33/2/301
Krier, A, Gao, H H, Sherstnev, V V, Yakovlev, Y (1999) High power 4.6 µm light emitting diodes for CO detection. Journal of Physics D: Applied Physics, 32. 3117-3121 doi:10.1088/0022-3727/32/24/304
Krier, A., Sherstnev, V. V., Gao, H. H., Monahov, A. M., Hill, G. (2002) Optical switching in midinfrared light-emitting diodes. Applied Physics Letters, 80 (16). 2821-2823 doi:10.1063/1.1470690
Krier, A, Huang, X L (2006) Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 39. 255-261 doi:10.1088/0022-3727/39/2/004
Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A., Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm. Applied Physics Letters, 82 (8). 1149-1151 doi:10.1063/1.1555276
Krier, A, Sherstnev, V V, Krier, A, Labadi, Z, Krier, S E, Gao, H H (2000) Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. Journal of Physics D: Applied Physics, 33. 3156-3160 doi:10.1088/0022-3727/33/24/305
Krier, A, Sherstnev, V V (2001) LEDs for formaldehyde detection at 3.6 µm. Journal of Physics D: Applied Physics, 34. 428-432 doi:10.1088/0022-3727/34/3/330
Gao, H H, Krier, A, Sherstnev, V, Yakovlev, Y (1999) Journal of Physics D: Applied Physics, 32. IOP Publishing. 1768-1772 doi:10.1088/0022-3727/32/15/302
Hung, L S, Zhang, R Q, He, P, Mason, G (2002) Contact formation of LiF/Al cathodes in Alq-based organic light-emitting diodes. Journal of Physics D: Applied Physics, 35. 103-107 doi:10.1088/0022-3727/35/2/302
 
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