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Salamov, B G, Lebedeva, N N, Kurt, H Y, Orbukh, V I, Bobrova, E Yu (2006) Formation of low resistance gas state near the surface of semiconductor electrode in pre-breakdown regime. Journal of Physics D: Applied Physics, 39. 2732-2737 doi:10.1088/0022-3727/39/13/016

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Reference TypeJournal (article/letter/editorial)
TitleFormation of low resistance gas state near the surface of semiconductor electrode in pre-breakdown regime
JournalJournal of Physics D: Applied Physics
AuthorsSalamov, B GAuthor
Lebedeva, N NAuthor
Kurt, H YAuthor
Orbukh, V IAuthor
Bobrova, E YuAuthor
Year2006 (July 7)Volume39
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/39/13/016Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5671431Long-form Identifiermindat:1:5:5671431:7
GUID0
Full ReferenceSalamov, B G, Lebedeva, N N, Kurt, H Y, Orbukh, V I, Bobrova, E Yu (2006) Formation of low resistance gas state near the surface of semiconductor electrode in pre-breakdown regime. Journal of Physics D: Applied Physics, 39. 2732-2737 doi:10.1088/0022-3727/39/13/016
Plain TextSalamov, B G, Lebedeva, N N, Kurt, H Y, Orbukh, V I, Bobrova, E Yu (2006) Formation of low resistance gas state near the surface of semiconductor electrode in pre-breakdown regime. Journal of Physics D: Applied Physics, 39. 2732-2737 doi:10.1088/0022-3727/39/13/016
In(2006) Journal of Physics D: Applied Physics Vol. 39. IOP Publishing

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Salamov, B G, Agasiev, A A, Lebedeva, N N, Orbukh, V I, Yucel, H, Çolakoglu, K (2002) Incoherent-to-coherent IR image converter on the basis of GaAs and Bi12SiO20crystals. Journal of Physics D: Applied Physics, 35. 716-720 doi:10.1088/0022-3727/35/7/321
Sadiq, Y, Kurt, H (Yücel), Salamov, B G (2008) Memory effect in semiconductor gas discharge electronic devices. Journal of Physics D: Applied Physics, 41. 225204pp. doi:10.1088/0022-3727/41/22/225204
Orbukh, V. I., Lebedeva, N. N., Salamov, B. G. (2014) Gas-discharge current in a mixture of zeolite and silicon powders. Technical Physics, 59 (1). 148-151 doi:10.1134/s1063784214010125
Salamov, B G, Kasap, M, Lebedeva, N N (2000) Prebreakdown current behaviour in the ionization cell with a semiconductor cathode. Journal of Physics D: Applied Physics, 33. 2192-2195 doi:10.1088/0022-3727/33/17/315
Salamov, B G, Kurt, H Y (2005) Current instability in a planar gas discharge system with a large-diameter semiconductor cathode. Journal of Physics D: Applied Physics, 38. 682-687 doi:10.1088/0022-3727/38/5/004
Kurt, H Y, Salamov, B G (2003) Behaviour of current in a planar gas discharge system with a large-diameter semiconductor cathode. Journal of Physics D: Applied Physics, 36. 1987-1993 doi:10.1088/0022-3727/36/16/310
Salamov, B G, Kasap, R (2006) Analysis of prebreakdown current in a gas discharge system with a semiconducting cathode. Journal of Physics D: Applied Physics, 39. 301-306 doi:10.1088/0022-3727/39/2/010
Wagenaars, E, Perriëns, N W B, Brok, W J M, Bowden, M D, Veldhuizen, E M van, Kroesen, G M W (2006) Pre-breakdown light emission phenomena in low-pressure argon between parabolic electrodes. Journal of Physics D: Applied Physics, 39. 3831-3837 doi:10.1088/0022-3727/39/17/019
Lebedeva, N N, Salamov, B G, Akinoglu, B G, Allakhverdiev, K R (1994) Visualization of electrical inhomogeneities in high-ohmic semiconductor plates by an ionization-type photographic system. Journal of Physics D: Applied Physics, 27. 1229-1232 doi:10.1088/0022-3727/27/6/021
Salamov, B G, Akinoglu, B G, Lebedeva, N N (1999) Spatial stabilization of Townsend discharge in a modified ionization cell with symmetrical short gaps between semiconductor plate and electrodes. Journal of Physics D: Applied Physics, 32. 2068-2074 doi:10.1088/0022-3727/32/16/316
Melikhov, K G, Shterenberg, A M, Zyn, V I (2006) Formation of surface relief in plasma polymerized films. Journal of Physics D: Applied Physics, 39. 944-949 doi:10.1088/0022-3727/39/5/008
 
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