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Yang, X L, Chen, Z T, Wang, C D, Huang, S, Fang, H, Zhang, G Y, Chen, D L, Yan, W S (2008) Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD. Journal of Physics D: Applied Physics, 41. 125002pp. doi:10.1088/0022-3727/41/12/125002

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Reference TypeJournal (article/letter/editorial)
TitleEffects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD
JournalJournal of Physics D: Applied Physics
AuthorsYang, X LAuthor
Chen, Z TAuthor
Wang, C DAuthor
Huang, SAuthor
Fang, HAuthor
Zhang, G YAuthor
Chen, D LAuthor
Yan, W SAuthor
Year2008 (June 21)Volume41
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/41/12/125002Search in ResearchGate
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Mindat Ref. ID5673405Long-form Identifiermindat:1:5:5673405:6
GUID0
Full ReferenceYang, X L, Chen, Z T, Wang, C D, Huang, S, Fang, H, Zhang, G Y, Chen, D L, Yan, W S (2008) Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD. Journal of Physics D: Applied Physics, 41. 125002pp. doi:10.1088/0022-3727/41/12/125002
Plain TextYang, X L, Chen, Z T, Wang, C D, Huang, S, Fang, H, Zhang, G Y, Chen, D L, Yan, W S (2008) Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD. Journal of Physics D: Applied Physics, 41. 125002pp. doi:10.1088/0022-3727/41/12/125002
In(2008) Journal of Physics D: Applied Physics Vol. 41. IOP Publishing

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