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Montes, M, Hierro, A, Ulloa, J M, Guzmán, A, Damilano, B, Hugues, M, Al Khalfioui, M, Duboz, J-Y, Massies, J (2008) Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes. Journal of Physics D: Applied Physics, 41. 155102pp. doi:10.1088/0022-3727/41/15/155102

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
JournalJournal of Physics D: Applied Physics
AuthorsMontes, MAuthor
Hierro, AAuthor
Ulloa, J MAuthor
Guzmán, AAuthor
Damilano, BAuthor
Hugues, MAuthor
Al Khalfioui, MAuthor
Duboz, J-YAuthor
Massies, JAuthor
Year2008 (August 7)Volume41
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/41/15/155102Search in ResearchGate
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Mindat Ref. ID5673604Long-form Identifiermindat:1:5:5673604:5
GUID0
Full ReferenceMontes, M, Hierro, A, Ulloa, J M, Guzmán, A, Damilano, B, Hugues, M, Al Khalfioui, M, Duboz, J-Y, Massies, J (2008) Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes. Journal of Physics D: Applied Physics, 41. 155102pp. doi:10.1088/0022-3727/41/15/155102
Plain TextMontes, M, Hierro, A, Ulloa, J M, Guzmán, A, Damilano, B, Hugues, M, Al Khalfioui, M, Duboz, J-Y, Massies, J (2008) Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes. Journal of Physics D: Applied Physics, 41. 155102pp. doi:10.1088/0022-3727/41/15/155102
In(2008) Journal of Physics D: Applied Physics Vol. 41. IOP Publishing

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Montes, M., Hierro, A., Ulloa, J. M., Guzmán, A., Al Khalfioui, M., Hugues, M., Damilano, B., Massies, J. (2010) External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes. Journal of Applied Physics, 108 (3). 33104pp. doi:10.1063/1.3467004
Montes, M., Hierro, A., Ulloa, J. M., Guzmán, A., Khalfioui, M. Al, Hugues, M., Damilano, B., Massies, J. (2009) Electroluminescence analysis of 1.3-1.5 μm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers. physica status solidi (c), 6 (6). 1424-1427 doi:10.1002/pssc.200881521
Ulloa, J. M., Hierro, A., Montes, M., Damilano, B., Hugues, M., Barjon, J., Duboz, J.-Y., Massies, J. (2005) Impact of N on the lasing characteristics of GaInNAs∕GaAs quantum well lasers emitting from 1.29 to 1.52μm. Applied Physics Letters, 87 (25). 251109pp. doi:10.1063/1.2151249
Damilano, B., Barjon, J., Duboz, J.-Y., Massies, J., Hierro, A., Ulloa, J.-M., Calleja, E. (2005) Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers. Applied Physics Letters, 86 (7). 71105pp. doi:10.1063/1.1863433
Hugues, M., Damilano, B., Duboz, J.-Y., Massies, J. (2006) Optimum indium composition for (Ga,In)(N,As)∕GaAs quantum wells emitting beyond 1.5μm. Applied Physics Letters, 88 (9). 91111pp. doi:10.1063/1.2180441
Hugues, M., Damilano, B., Chauveau, J.-M., Duboz, J.-Y., Massies, J. (2007) Blue-shift mechanisms in annealed(Ga,In)(N,As)∕GaAsquantum wells. Physical Review B, 75 (4) doi:10.1103/physrevb.75.045313
Hugues, M., Damilano, B., Duboz, J.-Y., Massies, J. (2007) Exciton dissociation and hole escape in the thermal photoluminescence quenching of(Ga,In)(N,As)quantum wells. Physical Review B, 75 (11) doi:10.1103/physrevb.75.115337
Hugues, M., Richter, M., Damilano, B., Chauveau, J.-M., Duboz, J.-Y., Massies, J., Wieck, A. D. (2006) Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5 µm. physica status solidi (c), 3 (11). 3979-3982 doi:10.1002/pssc.200671607
Hugues, M., Teisseire, M., Chauveau, J.-M., Vinter, B., Damilano, B., Duboz, J.-Y., Massies, J. (2007) Optical determination of the effective wetting layer thickness and composition inInAs∕Ga(In)Asquantum dots. Physical Review B, 76 (7) doi:10.1103/physrevb.76.075335
Richter, M., Damilano, B., Duboz, J.-Y., Massies, J., Wieck, A. D. (2006) Long wavelength emitting InAs∕Ga0.85In0.15NxAs1−x quantum dots on GaAs substrate. Applied Physics Letters, 88 (23). 231902pp. doi:10.1063/1.2209879
Richter, M., Hugues, M., Damilano, B., Massies, J., Duboz, J.-Y., Reuter, D., Wieck, A. D. (2006) 1.5 µm luminescence from InAs/GaxIn1–xNyAs1–y quantum dots grown on GaAs substrate. physica status solidi (c), 3 (11). 3848-3851 doi:10.1002/pssc.200671567
 
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