Vote for your favorite mineral in #MinCup25! - Dioptase vs. Wavellite
It's a green, green world for kiwi #wavellite vs desert emerald #dioptase.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Cheng, Liang, Xu, Weizong, Pan, Danfeng, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2019) Gate-first process compatible, high-quality in situ SiN x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs. Journal of Physics D: Applied Physics, 52. 305105pp. doi:10.1088/1361-6463/ab1dc3

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleGate-first process compatible, high-quality in situ SiN x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs
JournalJournal of Physics D: Applied Physics
AuthorsCheng, LiangAuthor
Xu, WeizongAuthor
Pan, DanfengAuthor
Zhu, YouhuaAuthor
Ren, FangfangAuthor
Zhou, DongAuthor
Ye, JiandongAuthor
Chen, DunjunAuthor
Zhang, RongAuthor
Zheng, YoudouAuthor
Lu, HaiAuthor
Year2019 (July 24)Volume52
PublisherIOP Publishing
DOIdoi:10.1088/1361-6463/ab1dc3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5694230Long-form Identifiermindat:1:5:5694230:9
GUID0
Full ReferenceCheng, Liang, Xu, Weizong, Pan, Danfeng, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2019) Gate-first process compatible, high-quality in situ SiN x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs. Journal of Physics D: Applied Physics, 52. 305105pp. doi:10.1088/1361-6463/ab1dc3
Plain TextCheng, Liang, Xu, Weizong, Pan, Danfeng, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2019) Gate-first process compatible, high-quality in situ SiN x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs. Journal of Physics D: Applied Physics, 52. 305105pp. doi:10.1088/1361-6463/ab1dc3
In(2019) Journal of Physics D: Applied Physics Vol. 52. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Cheng, Liang, Xu, Weizong, Pan, Danfeng, Liang, Huinan, Wang, Ronghua, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2021) Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx. Journal of Physics D: Applied Physics, 54 (1) 15105pp. doi:10.1088/1361-6463/abb161
Du, Yonghao, Xu, Weizong, Gong, Hehe, Ye, Jiandong, Zhou, Feng, Ren, Fangfang, Zhou, Dong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2022) Current transport dynamics and stability characteristics of the NiO x based gate structure for normally-off GaN HEMTs. Journal of Physics D: Applied Physics, 55 (47) 474001 doi:10.1088/1361-6463/ac9146
Hao, Lin, Hu, Tiancheng, Guo, Hui, Pan, Danfeng, Ye, Jiandong, Zhou, Yugang, Lu, Hai, Zhang, Rong, Zheng, Youdou, Chen, Dunjun (2024) Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3. Applied Physics Letters, 124 (15) doi:10.1063/5.0194688
Peng, Yanghu, Guo, Hui, Gong, Ruiling, Liu, Huaize, Shao, Pengfei, Sun, Na, Ren, Fangfang, Ye, Jiandong, Zheng, Youdou, Lu, Hai, Zhang, Rong, Chen, Dunjun (2024) Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias. Applied Physics Letters, 124 (17) doi:10.1063/5.0201650
Qian, Huimin, Wu, Chenfei, Lu, Hai, Xu, Weizong, Zhou, Dong, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou (2016) Bias stress instability involving subgap state transitions in a-IGZO Schottky barrier diodes. Journal of Physics D: Applied Physics, 49. 395104pp. doi:10.1088/0022-3727/49/39/395104
Guo, Hui, Shao, Pengfei, Bai, Haineng, Zhou, Jian, Peng, Yanghu, Li, Songlin, Xie, Zili, Liu, Bin, Chen, Dunjun, Lu, Hai, Zhang, Rong, Zheng, Youdou (2022) Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs. Journal of Physics D: Applied Physics, 55 (42) 424002 doi:10.1088/1361-6463/ac87bb
Yan, Dawei, Lu, Hai, Cao, Dongsheng, Chen, Dunjun, Zhang, Rong, Zheng, Youdou (2010) On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 97 (15). 153503pp. doi:10.1063/1.3499364
Zhang, Heng, Su, Linlin, Zhou, Dong, Xu, Weizong, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2019) Crosstalk Analysis of SiC Ultraviolet Single Photon Avalanche Photodiode Arrays. IEEE Photonics Journal, 11 (6) 1-8 doi:10.1109/jphot.2019.2954119
Guo, Lijian, Xu, Weizong, Wei, Qi, Liu, Xinghua, Li, Tianyi, Zhou, Dong, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai (2023) Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage. Chinese Physics B, 32 (2) 27302 doi:10.1088/1674-1056/ac81ad
Ge, Mei, Li, Yi, Zhu, Youhua, Chen, Dunjun, Wang, Zhiliang, Tan, Shuxin (2021) Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure. Journal of Physics D: Applied Physics, 54 (35) 355103pp. doi:10.1088/1361-6463/ac0a0b
Ge, Mei, Li, Yi, Zhu, Youhua, Chen, Dunjun, Wang, Zhiliang, Tan, Shuxin (2022) Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga2O3 back barrier. Journal of Physics D: Applied Physics, 55 (6) 65104pp. doi:10.1088/1361-6463/ac31f3
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 10, 2025 14:54:58
Go to top of page