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Cruz, J, Muhl, S, Andrade, E, de Lucio, O G (2019) Study of C, Al, Si and Ge sputtering yield amplification by ion beam analysis and co-sputtering simulation software. Journal of Physics D: Applied Physics, 52. 405202pp. doi:10.1088/1361-6463/ab2f40

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Reference TypeJournal (article/letter/editorial)
TitleStudy of C, Al, Si and Ge sputtering yield amplification by ion beam analysis and co-sputtering simulation software
JournalJournal of Physics D: Applied Physics
AuthorsCruz, JAuthor
Muhl, SAuthor
Andrade, EAuthor
de Lucio, O GAuthor
Year2019 (October 2)Volume52
PublisherIOP Publishing
DOIdoi:10.1088/1361-6463/ab2f40Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5694678Long-form Identifiermindat:1:5:5694678:5
GUID0
Full ReferenceCruz, J, Muhl, S, Andrade, E, de Lucio, O G (2019) Study of C, Al, Si and Ge sputtering yield amplification by ion beam analysis and co-sputtering simulation software. Journal of Physics D: Applied Physics, 52. 405202pp. doi:10.1088/1361-6463/ab2f40
Plain TextCruz, J, Muhl, S, Andrade, E, de Lucio, O G (2019) Study of C, Al, Si and Ge sputtering yield amplification by ion beam analysis and co-sputtering simulation software. Journal of Physics D: Applied Physics, 52. 405202pp. doi:10.1088/1361-6463/ab2f40
In(2019) Journal of Physics D: Applied Physics Vol. 52. IOP Publishing

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Cruz, J, Sanginés, R, Soto-Valle, G, Muhl, S, Sierra, I, De Lucio-Morales, O, Ruvalcaba, J L, Mitrani, A, Calderón-Olvera, R M, Mendoza-Pérez, R, Machorro-Mejía, R (2021) Si sputtering yield amplification: a study of the collisions cascade and species in the sputtering plasma. Journal of Physics D: Applied Physics, 54 (37) 375201pp. doi:10.1088/1361-6463/ac0c4e
Cruz, J., Andrade, E., Muhl, S., Canto, C., de Lucio, O., Chávez, E., Rocha, M.F., Garcés-Medina, E. (2016) Ion beam analysis and co-sputtering simulation (CO-SS) of bi-metal films produced by magnetron co-sputtering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 371. 268-272 doi:10.1016/j.nimb.2015.09.034
Cruz, J, Sanginés, R, Abundiz-Cisneros, N, Aguila-Muñoz, J, Muhl, S, Machorro-Mejía, R (2019) Modeling the thickness distribution of silicon oxide thin films grown by reactive magnetron sputtering. Journal of Physics D: Applied Physics, 52. 495201pp. doi:10.1088/1361-6463/ab3e9e
Amirov, I I, Izyumov, M O, Naumov, V V, Gorlachev, E S (2021) Ion-plasma sputtering of Co and Mo nanometer thin films near the sputtering threshold. Journal of Physics D: Applied Physics, 54 (6) 65204pp. doi:10.1088/1361-6463/abc3ed
Muhl, S, Zapien, J A, Mendez, J M, Andrade, E (1997) Aluminium nitride films prepared by reactive magnetron sputtering. Journal of Physics D: Applied Physics, 30. 2147-2155 doi:10.1088/0022-3727/30/15/005
Gabovich, Alexander M, Semeniuk, Valerii F, Semeniuk, Nadiia I (2019) New collective trampoline mechanism of accelerated ion-plasma sputtering. Journal of Physics D: Applied Physics, 52. 185201pp. doi:10.1088/1361-6463/ab05a1
Andrade, E., Flores, M., Muhl, S., Barradas, N.P., Murillo, G., Zavala, E.P., Rocha, M.F. (2004) Ion beam analysis of TiN/Ti multilayers deposited by magnetron sputtering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 219. 763-767 doi:10.1016/j.nimb.2004.01.159
Wahl, Tina, Hanisch, Jonas, Ahlswede, Erik (2018) Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells. Journal of Physics D: Applied Physics, 51. 135502pp. doi:10.1088/1361-6463/aab0d8
Tonneau, R, Moskovkin, P, Pflug, A, Lucas, S (2018) TiOxdeposited by magnetron sputtering: a joint modelling and experimental study. Journal of Physics D: Applied Physics, 51. 195202pp. doi:10.1088/1361-6463/aabb72
Schelfhout, R, Strijckmans, K, Depla, D (2018) Anomalous effects in the aluminum oxide sputtering yield. Journal of Physics D: Applied Physics, 51. 155202pp. doi:10.1088/1361-6463/aab321
Cevro, M, Carter, G (1995) Ion beam sputtering and dual ion beam sputtering of titanium oxide films. Journal of Physics D: Applied Physics, 28. 1962-1976 doi:10.1088/0022-3727/28/9/026
 
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