Evans, D.A., Landsberg, P.T. (1965) Theory of the decay of excess carrier concentrations in semiconductors. Journal of Physics and Chemistry of Solids, 26. 315-327 doi:10.1016/0022-3697(65)90161-7
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Theory of the decay of excess carrier concentrations in semiconductors | ||
Journal | Journal of Physics and Chemistry of Solids | ||
Authors | Evans, D.A. | Author | |
Landsberg, P.T. | Author | ||
Year | 1965 (February) | Volume | 26 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/0022-3697(65)90161-7Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5809281 | Long-form Identifier | mindat:1:5:5809281:1 |
GUID | 0 | ||
Full Reference | Evans, D.A., Landsberg, P.T. (1965) Theory of the decay of excess carrier concentrations in semiconductors. Journal of Physics and Chemistry of Solids, 26. 315-327 doi:10.1016/0022-3697(65)90161-7 | ||
Plain Text | Evans, D.A., Landsberg, P.T. (1965) Theory of the decay of excess carrier concentrations in semiconductors. Journal of Physics and Chemistry of Solids, 26. 315-327 doi:10.1016/0022-3697(65)90161-7 | ||
In | (n.d.) Journal of Physics and Chemistry of Solids Vol. 26. Elsevier BV |
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