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Thewalt, M. L. W. (1977) Details of the structure of bound excitons and bound multiexciton complexes in Si. Canadian Journal of Physics, 55. 1463-1480 doi:10.1139/p77-186

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Reference TypeJournal (article/letter/editorial)
TitleDetails of the structure of bound excitons and bound multiexciton complexes in Si
JournalCanadian Journal of Physics
AuthorsThewalt, M. L. W.Author
Year1977 (September 1)Volume55
PublisherCanadian Science Publishing
DOIdoi:10.1139/p77-186Search in ResearchGate
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Mindat Ref. ID5989923Long-form Identifiermindat:1:5:5989923:9
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Full ReferenceThewalt, M. L. W. (1977) Details of the structure of bound excitons and bound multiexciton complexes in Si. Canadian Journal of Physics, 55. 1463-1480 doi:10.1139/p77-186
Plain TextThewalt, M. L. W. (1977) Details of the structure of bound excitons and bound multiexciton complexes in Si. Canadian Journal of Physics, 55. 1463-1480 doi:10.1139/p77-186
In(n.d.) Canadian Journal of Physics Vol. 55. Canadian Science Publishing

See Also

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Thewalt, M. L. W. (1978) Erratum: Details of the structure of bound excitons and bound multiexciton complexes in Si. Canadian Journal of Physics, 56. 310 doi:10.1139/p78-038
Kirczenow, G. (1977) A shell model of bound multiexciton complexes in silicon. Canadian Journal of Physics, 55. 1787-1801 doi:10.1139/p77-220
Thewalt, M. L. W. (1977) Fine Structure of the Luminescence from Excitons and Multiexciton Complexes Bound to Acceptors in Si. Physical Review Letters, 38 (9). 521-524 doi:10.1103/physrevlett.38.521
Ziemelis, U. O., Parsons, R. R., Thewalt, M. L. W. (1982) Temperature dependent Zeeman study of bound exciton and bound multiexciton complex photoluminescence in Si(P) and Si(Li). Canadian Journal of Physics, 60. 222-238 doi:10.1139/p82-028
Watkins, S. P., Thewalt, M. L. W. (1985) Uniaxial stress and magnetic field dependence of the In- and Tl-related isoelectronic bound excitons in Si. Canadian Journal of Physics, 63. 1074-1082 doi:10.1139/p85-175
Thewalt, M. L. W., Ziemelis, U. O., Watkins, S. P., Parsons, R. R. (1982) Photoluminescence studies of isoelectronic bound excitons associated with the deep acceptors In and Tl in Si. Canadian Journal of Physics, 60. 1691-1708 doi:10.1139/p82-228
Maltman, Kim, Vogt, E. W. (1977) The atomic bound state of two pions and the Ο€ Ο€ scattering lengths. Canadian Journal of Physics, 55. 293-296 doi:10.1139/p77-042
Chang, Y. C., McGill, T. C. (1980) Excitation Spectra of Bound Excitons and Bound Multiexciton Complexes inn-Type Si. Physical Review Letters, 45 (6). 471-474 doi:10.1103/physrevlett.45.471
Sullivan, Brian T., Parsons, R. R. (1983) Kinetics of bound excitons and multi-exciton complexes in Si(B). Canadian Journal of Physics, 61. 288-298 doi:10.1139/p83-039
Wolk, J. A., Steiner, T. W., Karasyuk, V. A., Thewalt, M. L. W. (1994) Fine structure of a bound multiexciton complex in CdTe. Physical Review B, 50 (24) 18030-18033 doi:10.1103/physrevb.50.18030
Thewalt, M. L. W., Rostworowski, J. A. (1978) Effects of Uniaxial Stress on the Luminescence Lines Due to Multiexciton Complexes Bound to Phosphorus in Silicon. Physical Review Letters, 41 (12). 808-812 doi:10.1103/physrevlett.41.808
 
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