Hong-Ling, Gao, Yi-Ping, Zeng, Bao-Qiang, Wang, Zhan-Ping, Zhu, Zhan-Guo, Wang (2008) Influence of V/III ratio on the structural and photoluminescence properties of In 0.52 AlAs/In 0.53 GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy. Chinese Physics B, 17. 1119-1123 doi:10.1088/1674-1056/17/3/061
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Influence of V/III ratio on the structural and photoluminescence properties of In 0.52 AlAs/In 0.53 GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy | ||
| Journal | Chinese Physics B | ||
| Authors | Hong-Ling, Gao | Author | |
| Yi-Ping, Zeng | Author | ||
| Bao-Qiang, Wang | Author | ||
| Zhan-Ping, Zhu | Author | ||
| Zhan-Guo, Wang | Author | ||
| Year | 2008 (March) | Volume | 17 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/17/3/061Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5998300 | Long-form Identifier | mindat:1:5:5998300:6 |
| GUID | 0 | ||
| Full Reference | Hong-Ling, Gao, Yi-Ping, Zeng, Bao-Qiang, Wang, Zhan-Ping, Zhu, Zhan-Guo, Wang (2008) Influence of V/III ratio on the structural and photoluminescence properties of In 0.52 AlAs/In 0.53 GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy. Chinese Physics B, 17. 1119-1123 doi:10.1088/1674-1056/17/3/061 | ||
| Plain Text | Hong-Ling, Gao, Yi-Ping, Zeng, Bao-Qiang, Wang, Zhan-Ping, Zhu, Zhan-Guo, Wang (2008) Influence of V/III ratio on the structural and photoluminescence properties of In 0.52 AlAs/In 0.53 GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy. Chinese Physics B, 17. 1119-1123 doi:10.1088/1674-1056/17/3/061 | ||
| In | (n.d.) Chinese Physics B Vol. 17. IOP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
