Jun-Yi, Huang, Guang-Han, Fan, Shu-Wen, Zheng, Qiao-Li, Niu, Shu-Ti, Li, Jian-Xing, Cao, Jun, Su, Yong, Zhang (2010) Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes. Chinese Physics B, 19. 47205pp. doi:10.1088/1674-1056/19/4/047205
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes | ||
Journal | Chinese Physics B | ||
Authors | Jun-Yi, Huang | Author | |
Guang-Han, Fan | Author | ||
Shu-Wen, Zheng | Author | ||
Qiao-Li, Niu | Author | ||
Shu-Ti, Li | Author | ||
Jian-Xing, Cao | Author | ||
Jun, Su | Author | ||
Yong, Zhang | Author | ||
Year | 2010 (April) | Volume | 19 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/19/4/047205Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6000228 | Long-form Identifier | mindat:1:5:6000228:2 |
GUID | 0 | ||
Full Reference | Jun-Yi, Huang, Guang-Han, Fan, Shu-Wen, Zheng, Qiao-Li, Niu, Shu-Ti, Li, Jian-Xing, Cao, Jun, Su, Yong, Zhang (2010) Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes. Chinese Physics B, 19. 47205pp. doi:10.1088/1674-1056/19/4/047205 | ||
Plain Text | Jun-Yi, Huang, Guang-Han, Fan, Shu-Wen, Zheng, Qiao-Li, Niu, Shu-Ti, Li, Jian-Xing, Cao, Jun, Su, Yong, Zhang (2010) Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes. Chinese Physics B, 19. 47205pp. doi:10.1088/1674-1056/19/4/047205 | ||
In | (n.d.) Chinese Physics B Vol. 19. IOP Publishing |
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