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Hong-Di, Xiao, Hong-Zhi, Mao, Zhao-Jun, Lin, Hong-Lei, Ma (2010) Effect of high temperature annealing on strain and band gap of GaN nanoparticles. Chinese Physics B, 19. 86106pp. doi:10.1088/1674-1056/19/8/086106

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Reference TypeJournal (article/letter/editorial)
TitleEffect of high temperature annealing on strain and band gap of GaN nanoparticles
JournalChinese Physics B
AuthorsHong-Di, XiaoAuthor
Hong-Zhi, MaoAuthor
Zhao-Jun, LinAuthor
Hong-Lei, MaAuthor
Year2010 (August)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/8/086106Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6000601Long-form Identifiermindat:1:5:6000601:1
GUID0
Full ReferenceHong-Di, Xiao, Hong-Zhi, Mao, Zhao-Jun, Lin, Hong-Lei, Ma (2010) Effect of high temperature annealing on strain and band gap of GaN nanoparticles. Chinese Physics B, 19. 86106pp. doi:10.1088/1674-1056/19/8/086106
Plain TextHong-Di, Xiao, Hong-Zhi, Mao, Zhao-Jun, Lin, Hong-Lei, Ma (2010) Effect of high temperature annealing on strain and band gap of GaN nanoparticles. Chinese Physics B, 19. 86106pp. doi:10.1088/1674-1056/19/8/086106
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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