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Fa, Tao, Li, Lin, Yao, Shu-De, Wu, Ming-Fang, Zhou, Sheng-Qiang (2011) Unidirectional expansion of lattice parameters in GaN induced by ion implantation. Chinese Physics B, 20. 56101pp. doi:10.1088/1674-1056/20/5/056101

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Reference TypeJournal (article/letter/editorial)
TitleUnidirectional expansion of lattice parameters in GaN induced by ion implantation
JournalChinese Physics B
AuthorsFa, TaoAuthor
Li, LinAuthor
Yao, Shu-DeAuthor
Wu, Ming-FangAuthor
Zhou, Sheng-QiangAuthor
Year2011 (May)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/5/056101Search in ResearchGate
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Mindat Ref. ID6001424Long-form Identifiermindat:1:5:6001424:1
GUID0
Full ReferenceFa, Tao, Li, Lin, Yao, Shu-De, Wu, Ming-Fang, Zhou, Sheng-Qiang (2011) Unidirectional expansion of lattice parameters in GaN induced by ion implantation. Chinese Physics B, 20. 56101pp. doi:10.1088/1674-1056/20/5/056101
Plain TextFa, Tao, Li, Lin, Yao, Shu-De, Wu, Ming-Fang, Zhou, Sheng-Qiang (2011) Unidirectional expansion of lattice parameters in GaN induced by ion implantation. Chinese Physics B, 20. 56101pp. doi:10.1088/1674-1056/20/5/056101
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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