Song, Jie, Xu, Fu-Jun, Huang, Cheng-Cheng, Lin, Fang, Wang, Xin-Qiang, Yang, Zhi-Jian, Shen, Bo (2011) Different temperature dependence of carrier transport properties between Al x Ga 1– x N/In y Ga 1– y N/GaN and Al x Ga 1– x N/GaN heterostructures. Chinese Physics B, 20. 57305pp. doi:10.1088/1674-1056/20/5/057305

See Also

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	Yan, Wang, Bo, Shen, Fu-Jun, Xu, Sen, Huang, Zhen-Lin, Miao, Fang, Lin, Zhi-Jian, Yang, Guo-Yi, Zhang (2009) Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in Al x Ga 1 − x N barriers in Al x Ga 1− x N/GaN heterostructures. Chinese Physics B, 18. 2002-2005 doi:10.1088/1674-1056/18/5/045
	Lin, Fang, Shen, Bo, Lu, Li-Wu, Liu, Xin-Yu, Wei, Ke, Xu, Fu-Jun, Wang, Yan, Ma, Nan, Huang, Jun (2011) Identification and elimination of inductively coupled plasma-induced defects in Al x Ga 1- x N/GaN heterostructures. Chinese Physics B, 20. 77303pp. doi:10.1088/1674-1056/20/7/077303
	Lin, Fang, Shen, Bo, Lu, Li-Wu, Ma, Nan, Xu, Fu-Jun, Miao, Zhen-Lin, Song, Jie, Liu, Xin-Yu, Wei, Ke, Huang, Jun (2010) Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al x Ga 1− x N/GaN heterostructures at high temperatures. Chinese Physics B, 19. 127304pp. doi:10.1088/1674-1056/19/12/127304
	Shi, Li-Yang, Shen, Bo, Yan, Jian-Chang, Wang, Jun-Xi, Wang, Ping (2014) Localized deep levels in Al x Ga 1− x N epitaxial films with various Al compositions. Chinese Physics B, 23. 116102pp. doi:10.1088/1674-1056/23/11/116102
	Lee, Chang Woo, Peter, A. John (2011) Radiative life time of an exciton confined in a strained GaN/Ga 1- x Al x N cylindrical dot: built-in electric field effects. Chinese Physics B, 20. 77104pp. doi:10.1088/1674-1056/20/7/077104
	Li, Zhang, Jun-Jie, Shi (2007) Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al x Ga 1− x N/GaN/Al y Ga 1− y N Quantum Well. Communications in Theoretical Physics, 47 (2). 349-354 doi:10.1088/0253-6102/47/2/031
	Fang, Liu, Tao, Wang, Bo, Shen, Sen, Huang, Fang, Lin, Nan, Ma, Fu-Jun, Xu, Peng, Wang, Jian-Quan, Yao (2009) The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky contact. Chinese Physics B, 18. 1614-1617 doi:10.1088/1674-1056/18/4/054
	Dakhlaoui, Hassen (2014) Intersubband transitions in In x Al (1 − x ) N/In y Ga (1 − y ) N quantum well operating at 1.55 μm. Chinese Physics B, 23. 97304pp. doi:10.1088/1674-1056/23/9/097304
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