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Ma, Xiao-Hua, Ma, Ji-Gang, Yang, Li-Yuan, He, Qiang, Jiao, Ying, Ma, Ping, Hao, Yue (2011) Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress. Chinese Physics B, 20. 67304pp. doi:10.1088/1674-1056/20/6/067304

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Reference TypeJournal (article/letter/editorial)
TitleKink effect in AlGaN/GaN high electron mobility transistors by electrical stress
JournalChinese Physics B
AuthorsMa, Xiao-HuaAuthor
Ma, Ji-GangAuthor
Yang, Li-YuanAuthor
He, QiangAuthor
Jiao, YingAuthor
Ma, PingAuthor
Hao, YueAuthor
Year2011 (June)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/6/067304Search in ResearchGate
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Mindat Ref. ID6001512Long-form Identifiermindat:1:5:6001512:5
GUID0
Full ReferenceMa, Xiao-Hua, Ma, Ji-Gang, Yang, Li-Yuan, He, Qiang, Jiao, Ying, Ma, Ping, Hao, Yue (2011) Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress. Chinese Physics B, 20. 67304pp. doi:10.1088/1674-1056/20/6/067304
Plain TextMa, Xiao-Hua, Ma, Ji-Gang, Yang, Li-Yuan, He, Qiang, Jiao, Ying, Ma, Ping, Hao, Yue (2011) Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress. Chinese Physics B, 20. 67304pp. doi:10.1088/1674-1056/20/6/067304
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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