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Xu, Xiao-Bo, Xu, Kai-Xuan, Zhang, He-Ming, Qin, Shan-Shan (2011) A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects. Chinese Physics B, 20. 98501pp. doi:10.1088/1674-1056/20/9/098501

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Reference TypeJournal (article/letter/editorial)
TitleA device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects
JournalChinese Physics B
AuthorsXu, Xiao-BoAuthor
Xu, Kai-XuanAuthor
Zhang, He-MingAuthor
Qin, Shan-ShanAuthor
Year2011 (September)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/9/098501Search in ResearchGate
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Mindat Ref. ID6001776Long-form Identifiermindat:1:5:6001776:1
GUID0
Full ReferenceXu, Xiao-Bo, Xu, Kai-Xuan, Zhang, He-Ming, Qin, Shan-Shan (2011) A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects. Chinese Physics B, 20. 98501pp. doi:10.1088/1674-1056/20/9/098501
Plain TextXu, Xiao-Bo, Xu, Kai-Xuan, Zhang, He-Ming, Qin, Shan-Shan (2011) A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects. Chinese Physics B, 20. 98501pp. doi:10.1088/1674-1056/20/9/098501
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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Xu, Xiao-Bo, Zhang, He-Ming, Hu, Hui-Yong, Qu, Jiang-Tao (2011) Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator. Chinese Physics B, 20. 58503pp. doi:10.1088/1674-1056/20/5/058503
Xu, Xiao-Bo, Zhang, He-Ming, Hu, Hui-Yong, Ma, Jian-Li (2011) Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors. Chinese Physics B, 20. 58502pp. doi:10.1088/1674-1056/20/5/058502
Xu, Xiao-Bo, Zhang, He-Ming, Hu, Hui-Yong, Li, Yu-Chen, Qu, Jiang-Tao (2011) Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator. Chinese Physics B, 20. 108502pp. doi:10.1088/1674-1056/20/10/108502
Xu, Xiao-Bo, Zhang, He-Ming, Hu, Hui-Yong, Ma, Jian-Li, Xu, Li-Jun (2011) Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator. Chinese Physics B, 20. 18502pp. doi:10.1088/1674-1056/20/1/018502
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Liu, Jie, Gao, He, Li, Gang, Wei Li, Zheng, Ahmada, Kamal, Ying Shan, Zhang, Liu, Jian She, Chen, Wei (2017) Modulation depth of series SQUIDs modified by Josephson junction area *. Chinese Physics B, 26. 98501pp. doi:10.1088/1674-1056/26/9/098501
Xu, Xiao Bo, Zhang, He Ming, Hu, Hui Yong, Qin, Shan Shan, Qu, Jiang Tao (2011) Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology. Applied Mechanics and Materials, 110. 5452-5456 doi:10.4028/www.scientific.net/amm.110-116.5452
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