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Hu, Wei-Xuan, Cheng, Bu-Wen, Xue, Chun-Lai, Zhang, Guang-Ze, Su, Shao-Jian, Zuo, Yu-Hua, Wang, Qi-Ming (2012) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon. Chinese Physics B, 21. 17805pp. doi:10.1088/1674-1056/21/1/017805

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Reference TypeJournal (article/letter/editorial)
TitleRoom-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon
JournalChinese Physics B
AuthorsHu, Wei-XuanAuthor
Cheng, Bu-WenAuthor
Xue, Chun-LaiAuthor
Zhang, Guang-ZeAuthor
Su, Shao-JianAuthor
Zuo, Yu-HuaAuthor
Wang, Qi-MingAuthor
Year2012 (January)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/1/017805Search in ResearchGate
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Mindat Ref. ID6001860Long-form Identifiermindat:1:5:6001860:9
GUID0
Full ReferenceHu, Wei-Xuan, Cheng, Bu-Wen, Xue, Chun-Lai, Zhang, Guang-Ze, Su, Shao-Jian, Zuo, Yu-Hua, Wang, Qi-Ming (2012) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon. Chinese Physics B, 21. 17805pp. doi:10.1088/1674-1056/21/1/017805
Plain TextHu, Wei-Xuan, Cheng, Bu-Wen, Xue, Chun-Lai, Zhang, Guang-Ze, Su, Shao-Jian, Zuo, Yu-Hua, Wang, Qi-Ming (2012) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon. Chinese Physics B, 21. 17805pp. doi:10.1088/1674-1056/21/1/017805
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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