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Chen, Chao, Tian, Ben-Lang, Liu, Xing-Zhao, Dai, Li-Ping, Deng, Xin-Wu, Chen, Yuan-Fu (2012) The effects of 60 Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 21. 78503pp. doi:10.1088/1674-1056/21/7/078503

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Reference TypeJournal (article/letter/editorial)
TitleThe effects of 60 Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors
JournalChinese Physics B
AuthorsChen, ChaoAuthor
Tian, Ben-LangAuthor
Liu, Xing-ZhaoAuthor
Dai, Li-PingAuthor
Deng, Xin-WuAuthor
Chen, Yuan-FuAuthor
Year2012 (July)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/7/078503Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6002733Long-form Identifiermindat:1:5:6002733:3
GUID0
Full ReferenceChen, Chao, Tian, Ben-Lang, Liu, Xing-Zhao, Dai, Li-Ping, Deng, Xin-Wu, Chen, Yuan-Fu (2012) The effects of 60 Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 21. 78503pp. doi:10.1088/1674-1056/21/7/078503
Plain TextChen, Chao, Tian, Ben-Lang, Liu, Xing-Zhao, Dai, Li-Ping, Deng, Xin-Wu, Chen, Yuan-Fu (2012) The effects of 60 Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 21. 78503pp. doi:10.1088/1674-1056/21/7/078503
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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