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Liu, Chao-Ming, Li, Xing-Ji, Geng, Hong-Bin, Yang, De-Zhuang, He, Shi-Yu (2012) Effect of bias condition on heavy ion radiation in bipolar junction transistors. Chinese Physics B, 21. 80703pp. doi:10.1088/1674-1056/21/8/080703

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Reference TypeJournal (article/letter/editorial)
TitleEffect of bias condition on heavy ion radiation in bipolar junction transistors
JournalChinese Physics B
AuthorsLiu, Chao-MingAuthor
Li, Xing-JiAuthor
Geng, Hong-BinAuthor
Yang, De-ZhuangAuthor
He, Shi-YuAuthor
Year2012 (August)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/8/080703Search in ResearchGate
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Mindat Ref. ID6002758Long-form Identifiermindat:1:5:6002758:2
GUID0
Full ReferenceLiu, Chao-Ming, Li, Xing-Ji, Geng, Hong-Bin, Yang, De-Zhuang, He, Shi-Yu (2012) Effect of bias condition on heavy ion radiation in bipolar junction transistors. Chinese Physics B, 21. 80703pp. doi:10.1088/1674-1056/21/8/080703
Plain TextLiu, Chao-Ming, Li, Xing-Ji, Geng, Hong-Bin, Yang, De-Zhuang, He, Shi-Yu (2012) Effect of bias condition on heavy ion radiation in bipolar junction transistors. Chinese Physics B, 21. 80703pp. doi:10.1088/1674-1056/21/8/080703
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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