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Zhang, Xue-Feng, Wang, Li, Liu, Jie, Wei, Lai, Xu, Jian (2013) Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation. Chinese Physics B, 22. 17202pp. doi:10.1088/1674-1056/22/1/017202

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characteristics of AlInN/GaN HEMTs under cryogenic operation
JournalChinese Physics B
AuthorsZhang, Xue-FengAuthor
Wang, LiAuthor
Liu, JieAuthor
Wei, LaiAuthor
Xu, JianAuthor
Year2013 (January)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/1/017202Search in ResearchGate
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Mindat Ref. ID6003017Long-form Identifiermindat:1:5:6003017:9
GUID0
Full ReferenceZhang, Xue-Feng, Wang, Li, Liu, Jie, Wei, Lai, Xu, Jian (2013) Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation. Chinese Physics B, 22. 17202pp. doi:10.1088/1674-1056/22/1/017202
Plain TextZhang, Xue-Feng, Wang, Li, Liu, Jie, Wei, Lai, Xu, Jian (2013) Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation. Chinese Physics B, 22. 17202pp. doi:10.1088/1674-1056/22/1/017202
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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