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Qian, Wei-Ning, Su, Shi-Chen, Chen, Hong, Ma, Zi-Guang, Zhu, Ke-Bao, He, Miao, Lu, Ping-Yuan, Wang, Geng, Lu, Tai-Ping, Du, Chun-Hua, Wang, Qiao, Wu, Wen-Bo, Zhang, Wei-Wei (2013) Effect of In x Ga 1− x N “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition. Chinese Physics B, 22. 106106pp. doi:10.1088/1674-1056/22/10/106106

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Reference TypeJournal (article/letter/editorial)
TitleEffect of In x Ga 1− x N “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
JournalChinese Physics B
AuthorsQian, Wei-NingAuthor
Su, Shi-ChenAuthor
Chen, HongAuthor
Ma, Zi-GuangAuthor
Zhu, Ke-BaoAuthor
He, MiaoAuthor
Lu, Ping-YuanAuthor
Wang, GengAuthor
Lu, Tai-PingAuthor
Du, Chun-HuaAuthor
Wang, QiaoAuthor
Wu, Wen-BoAuthor
Zhang, Wei-WeiAuthor
Year2013 (October)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/10/106106Search in ResearchGate
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Mindat Ref. ID6003098Long-form Identifiermindat:1:5:6003098:4
GUID0
Full ReferenceQian, Wei-Ning, Su, Shi-Chen, Chen, Hong, Ma, Zi-Guang, Zhu, Ke-Bao, He, Miao, Lu, Ping-Yuan, Wang, Geng, Lu, Tai-Ping, Du, Chun-Hua, Wang, Qiao, Wu, Wen-Bo, Zhang, Wei-Wei (2013) Effect of In x Ga 1− x N “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition. Chinese Physics B, 22. 106106pp. doi:10.1088/1674-1056/22/10/106106
Plain TextQian, Wei-Ning, Su, Shi-Chen, Chen, Hong, Ma, Zi-Guang, Zhu, Ke-Bao, He, Miao, Lu, Ping-Yuan, Wang, Geng, Lu, Tai-Ping, Du, Chun-Hua, Wang, Qiao, Wu, Wen-Bo, Zhang, Wei-Wei (2013) Effect of In x Ga 1− x N “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition. Chinese Physics B, 22. 106106pp. doi:10.1088/1674-1056/22/10/106106
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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