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Tan, Ren-Bing, Qin, Hua, Zhang, Xiao-Yu, Xu, Wen (2013) Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors. Chinese Physics B, 22. 117306pp. doi:10.1088/1674-1056/22/11/117306

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Reference TypeJournal (article/letter/editorial)
TitleElectric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors
JournalChinese Physics B
AuthorsTan, Ren-BingAuthor
Qin, HuaAuthor
Zhang, Xiao-YuAuthor
Xu, WenAuthor
Year2013 (November)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/11/117306Search in ResearchGate
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Mindat Ref. ID6003224Long-form Identifiermindat:1:5:6003224:7
GUID0
Full ReferenceTan, Ren-Bing, Qin, Hua, Zhang, Xiao-Yu, Xu, Wen (2013) Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors. Chinese Physics B, 22. 117306pp. doi:10.1088/1674-1056/22/11/117306
Plain TextTan, Ren-Bing, Qin, Hua, Zhang, Xiao-Yu, Xu, Wen (2013) Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors. Chinese Physics B, 22. 117306pp. doi:10.1088/1674-1056/22/11/117306
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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