Liu, Chao, Ren, Zhi-Wei, Chen, Xin, Zhao, Bi-Jun, Wang, Xing-Fu, Yin, Yi-An, Li, Shu-Ti (2013) Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer. Chinese Physics B, 22. 58502pp. doi:10.1088/1674-1056/22/5/058502
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer | ||
| Journal | Chinese Physics B | ||
| Authors | Liu, Chao | Author | |
| Ren, Zhi-Wei | Author | ||
| Chen, Xin | Author | ||
| Zhao, Bi-Jun | Author | ||
| Wang, Xing-Fu | Author | ||
| Yin, Yi-An | Author | ||
| Li, Shu-Ti | Author | ||
| Year | 2013 (May) | Volume | 22 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/22/5/058502Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6003746 | Long-form Identifier | mindat:1:5:6003746:4 |
| GUID | 0 | ||
| Full Reference | Liu, Chao, Ren, Zhi-Wei, Chen, Xin, Zhao, Bi-Jun, Wang, Xing-Fu, Yin, Yi-An, Li, Shu-Ti (2013) Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer. Chinese Physics B, 22. 58502pp. doi:10.1088/1674-1056/22/5/058502 | ||
| Plain Text | Liu, Chao, Ren, Zhi-Wei, Chen, Xin, Zhao, Bi-Jun, Wang, Xing-Fu, Yin, Yi-An, Li, Shu-Ti (2013) Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer. Chinese Physics B, 22. 58502pp. doi:10.1088/1674-1056/22/5/058502 | ||
| In | (n.d.) Chinese Physics B Vol. 22. IOP Publishing | ||
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