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Fu, Qiang, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese Physics B, 22. 77309pp. doi:10.1088/1674-1056/22/7/077309

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Reference TypeJournal (article/letter/editorial)
TitleA dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate
JournalChinese Physics B
AuthorsFu, QiangAuthor
Zhang, BoAuthor
Luo, Xiao-RongAuthor
Li, Zhao-JiAuthor
Year2013 (July)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/7/077309Search in ResearchGate
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Mindat Ref. ID6003945Long-form Identifiermindat:1:5:6003945:3
GUID0
Full ReferenceFu, Qiang, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese Physics B, 22. 77309pp. doi:10.1088/1674-1056/22/7/077309
Plain TextFu, Qiang, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese Physics B, 22. 77309pp. doi:10.1088/1674-1056/22/7/077309
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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Luo, Xiao-Rong, Wang, Qi, Yao, Guo-Liang, Wang, Yuan-Gang, Lei, Tian-Fei, Wang, Pei, Jiang, Yong-Heng, Zhou, Kun, Zhang, Bo (2013) A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch. Chinese Physics B, 22. 27303pp. doi:10.1088/1674-1056/22/2/027303
Fan, Jie, Wang, Zhi-Gang, Zhang, Bo, Luo, Xiao-Rong (2013) Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance. Chinese Physics B, 22. 48501pp. doi:10.1088/1674-1056/22/4/048501
Fan, Jie, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) High-voltage SOI lateral MOSFET with a dual vertical field plate. Chinese Physics B, 22. 118502pp. doi:10.1088/1674-1056/22/11/118502
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Zhang, Manhong, Wu, Wanchen (2022) An insulated-gate bipolar transistor model based on the finite-volume charge method. Chinese Physics B, 31 (12) 128501 doi:10.1088/1674-1056/ac8723
Lee, Byeong-Hoon, Yun, Chong-Man, Byeon, Dae-Seok, Han, Min-Koo, Choi, Yearn-Ik (1995) A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with thep+Cathode Well. Japanese Journal of Applied Physics, 34. 854-859 doi:10.1143/jjap.34.854
Zhang, Jin-Ping, Deng, Hao-Nan, Zhu, Rong-Rong, Li, Ze-Hong, Zhang, Bo (2023) High performance carrier stored trench bipolar transistor with dual shielding structure. Chinese Physics B, 32 (3) 38501 doi:10.1088/1674-1056/ac873d
Sumida, Hitoshi, Hirabayashi, Atsuo (1998) Noise Current Induced by Switching of a Dielectric Isolated Lateral Insulated Gate Bipolar Transistor on Silicon-on-Insulator. Japanese Journal of Applied Physics, 37. 5533-5534 doi:10.1143/jjap.37.5533
Wu, Qing-Qing, Chen, Jing, Luo, Jie-Xin, LĂĽ, Kai, Yu, Tao, Chai, Zhan, Wang, Xi (2013) Gate-to-body tunneling current model for silicon-on-insulator MOSFETs. Chinese Physics B, 22. 108501pp. doi:10.1088/1674-1056/22/10/108501
Zhang, Jin-Ping, Li, Ze-Hong, Zhang, Bo, Li, Zhao-Ji (2012) A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer. Chinese Physics B, 21. 68504pp. doi:10.1088/1674-1056/21/6/068504
Zhang, Wen-Tong, Wu, Li-Juan, Qiao, Ming, Luo, Xiao-Rong, Zhang, Bo, Li, Zhao-Ji (2012) Novel high-voltage power lateral MOSFET with adaptive buried electrodes. Chinese Physics B, 21. 77101pp. doi:10.1088/1674-1056/21/7/077101
 
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