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He, Xiao-Min, Chen, Zhi-Ming, Pu, Hong-Bin, Li, Lian-Bi, Huang, Lei (2014) First-principles calculations on Si (220) located 6H—SiC (101̄0) surface with different stacking sites. Chinese Physics B, 23. 106802pp. doi:10.1088/1674-1056/23/10/106802

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Reference TypeJournal (article/letter/editorial)
TitleFirst-principles calculations on Si (220) located 6H—SiC (101̄0) surface with different stacking sites
JournalChinese Physics B
AuthorsHe, Xiao-MinAuthor
Chen, Zhi-MingAuthor
Pu, Hong-BinAuthor
Li, Lian-BiAuthor
Huang, LeiAuthor
Year2014 (October)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/10/106802Search in ResearchGate
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Mindat Ref. ID6004341Long-form Identifiermindat:1:5:6004341:0
GUID0
Full ReferenceHe, Xiao-Min, Chen, Zhi-Ming, Pu, Hong-Bin, Li, Lian-Bi, Huang, Lei (2014) First-principles calculations on Si (220) located 6H—SiC (101̄0) surface with different stacking sites. Chinese Physics B, 23. 106802pp. doi:10.1088/1674-1056/23/10/106802
Plain TextHe, Xiao-Min, Chen, Zhi-Ming, Pu, Hong-Bin, Li, Lian-Bi, Huang, Lei (2014) First-principles calculations on Si (220) located 6H—SiC (101̄0) surface with different stacking sites. Chinese Physics B, 23. 106802pp. doi:10.1088/1674-1056/23/10/106802
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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He, Xiao-Min, Chen, Zhi-Ming, Huang, Lei, Li, Lian-Bi (2015) First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction. Modern Physics Letters B, 29. 1550182pp. doi:10.1142/s0217984915501821
He, Xiao Min, Chen, Zhi Ming, Li, Lian Bi (2016) Effects of Sulfur Passivation on 6H-SiC(0001) Surface and Si/6H-SiC Interface. Materials Science Forum, 858. 185-188 doi:10.4028/www.scientific.net/msf.858.185
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