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Ma, Hai-Qiang, Yang, Jian-Hui, Wei, Ke-Jin, Li, Rui-Xue, Zhu, Wu (2014) Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes. Chinese Physics B, 23. 120308pp. doi:10.1088/1674-1056/23/12/120308

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Reference TypeJournal (article/letter/editorial)
TitleAfterpulsing characteristics of InGaAs/InP single photon avalanche diodes
JournalChinese Physics B
AuthorsMa, Hai-QiangAuthor
Yang, Jian-HuiAuthor
Wei, Ke-JinAuthor
Li, Rui-XueAuthor
Zhu, WuAuthor
Year2014 (December)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/12/120308Search in ResearchGate
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Mindat Ref. ID6004499Long-form Identifiermindat:1:5:6004499:6
GUID0
Full ReferenceMa, Hai-Qiang, Yang, Jian-Hui, Wei, Ke-Jin, Li, Rui-Xue, Zhu, Wu (2014) Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes. Chinese Physics B, 23. 120308pp. doi:10.1088/1674-1056/23/12/120308
Plain TextMa, Hai-Qiang, Yang, Jian-Hui, Wei, Ke-Jin, Li, Rui-Xue, Zhu, Wu (2014) Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes. Chinese Physics B, 23. 120308pp. doi:10.1088/1674-1056/23/12/120308
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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