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Huang, Jie, Li, Ming, Tang, Chak-Wah, Lau, Kei-May (2014) L g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n + -GaN layer by MOCVD. Chinese Physics B, 23. 128102pp. doi:10.1088/1674-1056/23/12/128102

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Reference TypeJournal (article/letter/editorial)
TitleL g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n + -GaN layer by MOCVD
JournalChinese Physics B
AuthorsHuang, JieAuthor
Li, MingAuthor
Tang, Chak-WahAuthor
Lau, Kei-MayAuthor
Year2014 (December)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/12/128102Search in ResearchGate
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Mindat Ref. ID6004572Long-form Identifiermindat:1:5:6004572:8
GUID0
Full ReferenceHuang, Jie, Li, Ming, Tang, Chak-Wah, Lau, Kei-May (2014) L g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n + -GaN layer by MOCVD. Chinese Physics B, 23. 128102pp. doi:10.1088/1674-1056/23/12/128102
Plain TextHuang, Jie, Li, Ming, Tang, Chak-Wah, Lau, Kei-May (2014) L g = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n + -GaN layer by MOCVD. Chinese Physics B, 23. 128102pp. doi:10.1088/1674-1056/23/12/128102
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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Li, Ming, Wang, Yong, Wong, Kai-Ming, Lau, Kei-May (2014) Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B, 23. 38403pp. doi:10.1088/1674-1056/23/3/038403
Huang, Jie, Li, Ming, Lau, Kei-May (2015) Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD. Chinese Physics B, 24. 78102pp. doi:10.1088/1674-1056/24/7/078102
Li, Hai-Ou, Huang, Wei, Tang, Chak Wah, Deng, Xiao-Fang, Lau, Kei May (2011) Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition. Chinese Physics B, 20. 68502pp. doi:10.1088/1674-1056/20/6/068502
Huang, Jie, Li, Ming, Zhao, Qian, Gu, Wen-Wen, Lau, Kei-May (2015) Hetero-epitaxy of L g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications. Chinese Physics B, 24. 87305pp. doi:10.1088/1674-1056/24/8/087305
Zhou, Xiuju, Tang, Chak Wah, Li, Qiang, Lau, Kei May (2012) In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD. physica status solidi (a), 209 (7). 1380-1383 doi:10.1002/pssa.201127707
Wang, Yong, Yu, NaiSen, Deng, DongMei, Li, Ming, Sun, Fei, Lau, KeiMay (2010) Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD. Science China Physics, Mechanics and Astronomy, 53. 1578-1581 doi:10.1007/s11433-010-4081-3
Li, Shi-Bin, Yu, Hong-Ping, Zhang, Ting, Chen, Zhi, Wu, Zhi-Ming (2014) Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction. Chinese Physics B, 23. 107101pp. doi:10.1088/1674-1056/23/10/107101
Zhao, Jing-Tao, Lin, Zhao-Jun, Luan, Chong-Biao, Lü, Yuan-Jie, Feng, Zhi-Hong, Yang, Ming (2014) Effects of GaN cap layer thickness on an AlN/GaN heterostructure. Chinese Physics B, 23. 127104pp. doi:10.1088/1674-1056/23/12/127104
Pongthavornkamol, Tiwat, Pang, Lei, Yuan, Ting-Ting, Liu, Xin-Yu (2014) Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method. Chinese Physics B, 23. 127304pp. doi:10.1088/1674-1056/23/12/127304
Ge, Mei, Cai, Qing, Zhang, Bao-Hua, Chen, Dun-Jun, Hu, Li-Qun, Xue, Jun-Jun, Lu, Hai, Zhang, Rong, Zheng, You-Dou (2019) Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer. Chinese Physics B, 28. 107301pp. doi:10.1088/1674-1056/ab3e00
Kotani, Junji, Yaita, Junya, Yamada, Atsushi, Nakamura, Norikazu, Watanabe, Keiji (2020) Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates. Journal of Applied Physics, 127 (23) 234501pp. doi:10.1063/1.5142696
 
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