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Zhang, Dian, Liu, Fa-Min, Cai, Lu-Gang (2014) N vacancy, substitutional O, and Al defects in the bandgap of composition-tunable nonstoichiometric AlN powder. Chinese Physics B, 23. 67803pp. doi:10.1088/1674-1056/23/6/067803

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Reference TypeJournal (article/letter/editorial)
TitleN vacancy, substitutional O, and Al defects in the bandgap of composition-tunable nonstoichiometric AlN powder
JournalChinese Physics B
AuthorsZhang, DianAuthor
Liu, Fa-MinAuthor
Cai, Lu-GangAuthor
Year2014 (June)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/6/067803Search in ResearchGate
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Mindat Ref. ID6005113Long-form Identifiermindat:1:5:6005113:6
GUID0
Full ReferenceZhang, Dian, Liu, Fa-Min, Cai, Lu-Gang (2014) N vacancy, substitutional O, and Al defects in the bandgap of composition-tunable nonstoichiometric AlN powder. Chinese Physics B, 23. 67803pp. doi:10.1088/1674-1056/23/6/067803
Plain TextZhang, Dian, Liu, Fa-Min, Cai, Lu-Gang (2014) N vacancy, substitutional O, and Al defects in the bandgap of composition-tunable nonstoichiometric AlN powder. Chinese Physics B, 23. 67803pp. doi:10.1088/1674-1056/23/6/067803
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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