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Wang, Huan, Yao, Shu-De (2014) Characterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling. Chinese Physics B, 23. 96801pp. doi:10.1088/1674-1056/23/9/096801

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling
JournalChinese Physics B
AuthorsWang, HuanAuthor
Yao, Shu-DeAuthor
Year2014 (September)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/9/096801Search in ResearchGate
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Mindat Ref. ID6005417Long-form Identifiermindat:1:5:6005417:9
GUID0
Full ReferenceWang, Huan, Yao, Shu-De (2014) Characterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling. Chinese Physics B, 23. 96801pp. doi:10.1088/1674-1056/23/9/096801
Plain TextWang, Huan, Yao, Shu-De (2014) Characterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling. Chinese Physics B, 23. 96801pp. doi:10.1088/1674-1056/23/9/096801
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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