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Hong, Wen-Ting, Han, Wei-Hua, Lyu, Qi-Feng, Wang, Hao, Yang, Fu-Hua (2015) Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities. Chinese Physics B, 24. 107306pp. doi:10.1088/1674-1056/24/10/107306

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Reference TypeJournal (article/letter/editorial)
TitleFermi level pinning effects at gate–dielectric interfaces influenced by interface state densities
JournalChinese Physics B
AuthorsHong, Wen-TingAuthor
Han, Wei-HuaAuthor
Lyu, Qi-FengAuthor
Wang, HaoAuthor
Yang, Fu-HuaAuthor
Year2015 (October)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/10/107306Search in ResearchGate
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Mindat Ref. ID6005624Long-form Identifiermindat:1:5:6005624:7
GUID0
Full ReferenceHong, Wen-Ting, Han, Wei-Hua, Lyu, Qi-Feng, Wang, Hao, Yang, Fu-Hua (2015) Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities. Chinese Physics B, 24. 107306pp. doi:10.1088/1674-1056/24/10/107306
Plain TextHong, Wen-Ting, Han, Wei-Hua, Lyu, Qi-Feng, Wang, Hao, Yang, Fu-Hua (2015) Fermi level pinning effects at gate–dielectric interfaces influenced by interface state densities. Chinese Physics B, 24. 107306pp. doi:10.1088/1674-1056/24/10/107306
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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