Vote for your favorite mineral in #MinCup25! - Silver vs. Baryte
Are you ready for beautiful utility as sparkling silver competes against hefty baryte?
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Xu, Ke, Wang, Jian-Feng, Ren, Guo-Qiang (2015) Progress in bulk GaN growth. Chinese Physics B, 24. 66105pp. doi:10.1088/1674-1056/24/6/066105

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleProgress in bulk GaN growth
JournalChinese Physics B
AuthorsXu, KeAuthor
Wang, Jian-FengAuthor
Ren, Guo-QiangAuthor
Year2015 (June)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/6/066105Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6006268Long-form Identifiermindat:1:5:6006268:2
GUID0
Full ReferenceXu, Ke, Wang, Jian-Feng, Ren, Guo-Qiang (2015) Progress in bulk GaN growth. Chinese Physics B, 24. 66105pp. doi:10.1088/1674-1056/24/6/066105
Plain TextXu, Ke, Wang, Jian-Feng, Ren, Guo-Qiang (2015) Progress in bulk GaN growth. Chinese Physics B, 24. 66105pp. doi:10.1088/1674-1056/24/6/066105
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Zhang, Yu-Min, Wang, Jian-Feng, Cai, De-Min, Ren, Guo-Qiang, Xu, Yu, Wang, Ming-Yue, Hu, Xiao-Jian, Xu, Ke (2020) Growth and doping of bulk GaN by hydride vapor phase epitaxy. Chinese Physics B, 29. 26104pp. doi:10.1088/1674-1056/ab65b9
Wu, Jie-Jun, Wang, Kun, Yu, Tong-Jun, Zhang, Guo-Yi (2015) GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges. Chinese Physics B, 24. 68106pp. doi:10.1088/1674-1056/24/6/068106
Shao, Kai-Heng, Zhang, Yu-Min, Wang, Jian-Feng, Xu, Ke (2021) Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation. Chinese Physics B, 30 (11) 116104pp. doi:10.1088/1674-1056/abfd9e
Lei, Zhi-Feng, Zhang, Zhan-Gang, En, Yun-Fei, Huang, Yun (2018) Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool. Chinese Physics B, 27. 66105pp. doi:10.1088/1674-1056/27/6/066105
Zhang, Yan-Wen, Wang, Xu, Liu, Shi-Yi, Tang, Mei-Xiong, Zhao, Zi-Qiang, Zhang, Peng, Wang, Bao-Yi, Cao, Xing-Zhong (2014) Irradiation effect of yttria-stabilized zirconia by high dose dual ion beam irradiation. Chinese Physics B, 23. 66105pp. doi:10.1088/1674-1056/23/6/066105
Liu, Jian-Ming, Zhang, Jie, Lin, Wen-Yu, Ye, Meng-Xin, Feng, Xiang-Xu, Zhang, Dong-Yan, Steve, Ding, Xu, Chen-Ke, Liu, Bao-Lin (2015) Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates. Chinese Physics B, 24. 57801pp. doi:10.1088/1674-1056/24/5/057801
Gao, Zhi-Yuan, Xue, Xiao-Wei, Li, Jiang-Jiang, Wang, Xun, Xing, Yan-Hui, Cui, Bi-Feng, Zou, De-Shu (2016) Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption. Chinese Physics B, 25. 66105pp. doi:10.1088/1674-1056/25/6/066105
Wang, Jian-Wu, Feng, Zheng-He (2015) Time-domain nature of group delay. Chinese Physics B, 24. 100301pp. doi:10.1088/1674-1056/24/10/100301
Guo, Shan, Xu, Ke, Xu, Chao, Ren, Zhi-Gang, Xiao, Bing-Jia (2015) Start-up phase plasma discharge design of a tokamak via control parameterization method. Chinese Physics B, 24. 35202pp. doi:10.1088/1674-1056/24/3/035202
Guo, Rong-Rong, Jie, Wan-Qi, Zha, Gang-Qiang, Xu, Ya-Dong, Feng, Tao, Wang, Tao, Du, Zhuo-Tong (2015) Effect of de-trapping on carrier transport process in semi-insulating CdZnTe. Chinese Physics B, 24. 67203pp. doi:10.1088/1674-1056/24/6/067203
Wang, Hai-Yan, Lin, Zhi-Ting, Han, Jing-Lei, Zhong, Li-Yi, Li, Guo-Qiang (2015) Design of patterned sapphire substrates for GaN-based light-emitting diodes. Chinese Physics B, 24. 67103pp. doi:10.1088/1674-1056/24/6/067103
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 5, 2025 13:27:15
Go to top of page