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Zhang, Yong, Wang, Ye-Liang, Que, Yan-De, Gao, Hong-Jun (2015) Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy. Chinese Physics B, 24. 78104pp. doi:10.1088/1674-1056/24/7/078104

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Reference TypeJournal (article/letter/editorial)
TitleCharacterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy
JournalChinese Physics B
AuthorsZhang, YongAuthor
Wang, Ye-LiangAuthor
Que, Yan-DeAuthor
Gao, Hong-JunAuthor
Year2015 (July)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/7/078104Search in ResearchGate
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Mindat Ref. ID6006408Long-form Identifiermindat:1:5:6006408:8
GUID0
Full ReferenceZhang, Yong, Wang, Ye-Liang, Que, Yan-De, Gao, Hong-Jun (2015) Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy. Chinese Physics B, 24. 78104pp. doi:10.1088/1674-1056/24/7/078104
Plain TextZhang, Yong, Wang, Ye-Liang, Que, Yan-De, Gao, Hong-Jun (2015) Characterizing silicon intercalated graphene grown epitaxially on Ir films by atomic force microscopy. Chinese Physics B, 24. 78104pp. doi:10.1088/1674-1056/24/7/078104
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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