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Zhang, Ya-Chao, Zhou, Xiao-Wei, Xu, Sheng-Rui, Chen, Da-Zheng, Wang, Zhi-Zhe, Wang, Xing, Zhang, Jin-Feng, Zhang, Jin-Cheng, Hao, Yue (2016) Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition. Chinese Physics B, 25. 18102pp. doi:10.1088/1674-1056/25/1/018102

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Reference TypeJournal (article/letter/editorial)
TitleSuperior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition
JournalChinese Physics B
AuthorsZhang, Ya-ChaoAuthor
Zhou, Xiao-WeiAuthor
Xu, Sheng-RuiAuthor
Chen, Da-ZhengAuthor
Wang, Zhi-ZheAuthor
Wang, XingAuthor
Zhang, Jin-FengAuthor
Zhang, Jin-ChengAuthor
Hao, YueAuthor
Year2016 (January)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/1/018102Search in ResearchGate
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Mindat Ref. ID6006706Long-form Identifiermindat:1:5:6006706:7
GUID0
Full ReferenceZhang, Ya-Chao, Zhou, Xiao-Wei, Xu, Sheng-Rui, Chen, Da-Zheng, Wang, Zhi-Zhe, Wang, Xing, Zhang, Jin-Feng, Zhang, Jin-Cheng, Hao, Yue (2016) Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition. Chinese Physics B, 25. 18102pp. doi:10.1088/1674-1056/25/1/018102
Plain TextZhang, Ya-Chao, Zhou, Xiao-Wei, Xu, Sheng-Rui, Chen, Da-Zheng, Wang, Zhi-Zhe, Wang, Xing, Zhang, Jin-Feng, Zhang, Jin-Cheng, Hao, Yue (2016) Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition. Chinese Physics B, 25. 18102pp. doi:10.1088/1674-1056/25/1/018102
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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