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Lu, Lin, Li, Ming-Chao, Lv, Chen, Gao, Wen-Gen, Jiang, Ming, Xu, Fu-Jun, Chen, Qi-Gong (2016) Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers. Chinese Physics B, 25. 108801pp. doi:10.1088/1674-1056/25/10/108801

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Reference TypeJournal (article/letter/editorial)
TitleComparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers
JournalChinese Physics B
AuthorsLu, LinAuthor
Li, Ming-ChaoAuthor
Lv, ChenAuthor
Gao, Wen-GenAuthor
Jiang, MingAuthor
Xu, Fu-JunAuthor
Chen, Qi-GongAuthor
Year2016 (October)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/10/108801Search in ResearchGate
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Mindat Ref. ID6006821Long-form Identifiermindat:1:5:6006821:5
GUID0
Full ReferenceLu, Lin, Li, Ming-Chao, Lv, Chen, Gao, Wen-Gen, Jiang, Ming, Xu, Fu-Jun, Chen, Qi-Gong (2016) Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers. Chinese Physics B, 25. 108801pp. doi:10.1088/1674-1056/25/10/108801
Plain TextLu, Lin, Li, Ming-Chao, Lv, Chen, Gao, Wen-Gen, Jiang, Ming, Xu, Fu-Jun, Chen, Qi-Gong (2016) Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers. Chinese Physics B, 25. 108801pp. doi:10.1088/1674-1056/25/10/108801
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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