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Kang, Hai-Yan, Hu, Hui-Yong, Wang, Bin (2016) Analytical threshold voltage model for strained silicon GAA-TFET. Chinese Physics B, 25. 118501pp. doi:10.1088/1674-1056/25/11/118501

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Reference TypeJournal (article/letter/editorial)
TitleAnalytical threshold voltage model for strained silicon GAA-TFET
JournalChinese Physics B
AuthorsKang, Hai-YanAuthor
Hu, Hui-YongAuthor
Wang, BinAuthor
Year2016 (November)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/11/118501Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6006924Long-form Identifiermindat:1:5:6006924:1
GUID0
Full ReferenceKang, Hai-Yan, Hu, Hui-Yong, Wang, Bin (2016) Analytical threshold voltage model for strained silicon GAA-TFET. Chinese Physics B, 25. 118501pp. doi:10.1088/1674-1056/25/11/118501
Plain TextKang, Hai-Yan, Hu, Hui-Yong, Wang, Bin (2016) Analytical threshold voltage model for strained silicon GAA-TFET. Chinese Physics B, 25. 118501pp. doi:10.1088/1674-1056/25/11/118501
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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