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Liu, Libin, Liang, Renrong, Shan, Bolin, Xu, Jun, Wang, Jing (2016) Technology demonstration of a novel poly-Si nanowire thin film transistor. Chinese Physics B, 25. 118504pp. doi:10.1088/1674-1056/25/11/118504

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Reference TypeJournal (article/letter/editorial)
TitleTechnology demonstration of a novel poly-Si nanowire thin film transistor
JournalChinese Physics B
AuthorsLiu, LibinAuthor
Liang, RenrongAuthor
Shan, BolinAuthor
Xu, JunAuthor
Wang, JingAuthor
Year2016 (November)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/11/118504Search in ResearchGate
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Mindat Ref. ID6006927Long-form Identifiermindat:1:5:6006927:8
GUID0
Full ReferenceLiu, Libin, Liang, Renrong, Shan, Bolin, Xu, Jun, Wang, Jing (2016) Technology demonstration of a novel poly-Si nanowire thin film transistor. Chinese Physics B, 25. 118504pp. doi:10.1088/1674-1056/25/11/118504
Plain TextLiu, Libin, Liang, Renrong, Shan, Bolin, Xu, Jun, Wang, Jing (2016) Technology demonstration of a novel poly-Si nanowire thin film transistor. Chinese Physics B, 25. 118504pp. doi:10.1088/1674-1056/25/11/118504
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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