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Zhao, Yan-Xiao, Zhang, Wan-Rong, Xin, Huang, Xie, Hong-Yun, Jin, Dong-Yue, Fu, Qiang (2016) Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors. Chinese Physics B, 25. 38501pp. doi:10.1088/1674-1056/25/3/038501

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Reference TypeJournal (article/letter/editorial)
TitleEffect of lateral structure parameters of SiGe HBTs on synthesized active inductors
JournalChinese Physics B
AuthorsZhao, Yan-XiaoAuthor
Zhang, Wan-RongAuthor
Xin, HuangAuthor
Xie, Hong-YunAuthor
Jin, Dong-YueAuthor
Fu, QiangAuthor
Year2016 (March)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/3/038501Search in ResearchGate
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Mindat Ref. ID6007184Long-form Identifiermindat:1:5:6007184:8
GUID0
Full ReferenceZhao, Yan-Xiao, Zhang, Wan-Rong, Xin, Huang, Xie, Hong-Yun, Jin, Dong-Yue, Fu, Qiang (2016) Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors. Chinese Physics B, 25. 38501pp. doi:10.1088/1674-1056/25/3/038501
Plain TextZhao, Yan-Xiao, Zhang, Wan-Rong, Xin, Huang, Xie, Hong-Yun, Jin, Dong-Yue, Fu, Qiang (2016) Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors. Chinese Physics B, 25. 38501pp. doi:10.1088/1674-1056/25/3/038501
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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