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Yan, Zhao-wen, Wang, Jiao, Qiao, Jian-li, Chen, Wen-jie, Yang, Pan, Xiao, Tong, Yang, Jian-hong (2016) Numerical simulation study of organic nonvolatile memory with polysilicon floating gate. Chinese Physics B, 25. 67102pp. doi:10.1088/1674-1056/25/6/067102

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Reference TypeJournal (article/letter/editorial)
TitleNumerical simulation study of organic nonvolatile memory with polysilicon floating gate
JournalChinese Physics B
AuthorsYan, Zhao-wenAuthor
Wang, JiaoAuthor
Qiao, Jian-liAuthor
Chen, Wen-jieAuthor
Yang, PanAuthor
Xiao, TongAuthor
Yang, Jian-hongAuthor
Year2016 (June)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/6/067102Search in ResearchGate
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Mindat Ref. ID6007399Long-form Identifiermindat:1:5:6007399:8
GUID0
Full ReferenceYan, Zhao-wen, Wang, Jiao, Qiao, Jian-li, Chen, Wen-jie, Yang, Pan, Xiao, Tong, Yang, Jian-hong (2016) Numerical simulation study of organic nonvolatile memory with polysilicon floating gate. Chinese Physics B, 25. 67102pp. doi:10.1088/1674-1056/25/6/067102
Plain TextYan, Zhao-wen, Wang, Jiao, Qiao, Jian-li, Chen, Wen-jie, Yang, Pan, Xiao, Tong, Yang, Jian-hong (2016) Numerical simulation study of organic nonvolatile memory with polysilicon floating gate. Chinese Physics B, 25. 67102pp. doi:10.1088/1674-1056/25/6/067102
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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