Shirzadi, Bahram, Yarmohammadi, Mohsen (2017) Spin-valley Hall conductivity of doped ferromagnetic silicene under strain. Chinese Physics B, 26. 17203pp. doi:10.1088/1674-1056/26/1/017203
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Spin-valley Hall conductivity of doped ferromagnetic silicene under strain | ||
Journal | Chinese Physics B | ||
Authors | Shirzadi, Bahram | Author | |
Yarmohammadi, Mohsen | Author | ||
Year | 2017 (January) | Volume | 26 |
Publisher | IOP Publishing | ||
DOI | doi:10.1088/1674-1056/26/1/017203Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6007759 | Long-form Identifier | mindat:1:5:6007759:6 |
GUID | 0 | ||
Full Reference | Shirzadi, Bahram, Yarmohammadi, Mohsen (2017) Spin-valley Hall conductivity of doped ferromagnetic silicene under strain. Chinese Physics B, 26. 17203pp. doi:10.1088/1674-1056/26/1/017203 | ||
Plain Text | Shirzadi, Bahram, Yarmohammadi, Mohsen (2017) Spin-valley Hall conductivity of doped ferromagnetic silicene under strain. Chinese Physics B, 26. 17203pp. doi:10.1088/1674-1056/26/1/017203 | ||
In | (n.d.) Chinese Physics B Vol. 26. IOP Publishing |
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