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Wei, Jia-Nan, Guo, Hong-Xia, Zhang, Feng-Qi, Luo, Yin-Hong, Ding, Li-Li, Pan, Xiao-Yu, Zhang, Yang, Liu, Yu-Hui (2017) Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory. Chinese Physics B, 26. 96102pp. doi:10.1088/1674-1056/26/9/096102

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Reference TypeJournal (article/letter/editorial)
TitleIonizing radiation effect on single event upset sensitivity of ferroelectric random access memory
JournalChinese Physics B
AuthorsWei, Jia-NanAuthor
Guo, Hong-XiaAuthor
Zhang, Feng-QiAuthor
Luo, Yin-HongAuthor
Ding, Li-LiAuthor
Pan, Xiao-YuAuthor
Zhang, YangAuthor
Liu, Yu-HuiAuthor
Year2017 (August)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/9/096102Search in ResearchGate
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Mindat Ref. ID6008648Long-form Identifiermindat:1:5:6008648:8
GUID0
Full ReferenceWei, Jia-Nan, Guo, Hong-Xia, Zhang, Feng-Qi, Luo, Yin-Hong, Ding, Li-Li, Pan, Xiao-Yu, Zhang, Yang, Liu, Yu-Hui (2017) Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory. Chinese Physics B, 26. 96102pp. doi:10.1088/1674-1056/26/9/096102
Plain TextWei, Jia-Nan, Guo, Hong-Xia, Zhang, Feng-Qi, Luo, Yin-Hong, Ding, Li-Li, Pan, Xiao-Yu, Zhang, Yang, Liu, Yu-Hui (2017) Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory. Chinese Physics B, 26. 96102pp. doi:10.1088/1674-1056/26/9/096102
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing

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