Zhang, Meng-Ying, Hu, Zhi-Yuan, Bi, Da-Wei, Dai, Li-Hua, Zhang, Zheng-Xuan (2018) Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation. Chinese Physics B, 27. 28501pp. doi:10.1088/1674-1056/27/2/028501
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation | ||
| Journal | Chinese Physics B | ||
| Authors | Zhang, Meng-Ying | Author | |
| Hu, Zhi-Yuan | Author | ||
| Bi, Da-Wei | Author | ||
| Dai, Li-Hua | Author | ||
| Zhang, Zheng-Xuan | Author | ||
| Year | 2018 (February) | Volume | 27 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/27/2/028501Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6009116 | Long-form Identifier | mindat:1:5:6009116:1 |
| GUID | 0 | ||
| Full Reference | Zhang, Meng-Ying, Hu, Zhi-Yuan, Bi, Da-Wei, Dai, Li-Hua, Zhang, Zheng-Xuan (2018) Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation. Chinese Physics B, 27. 28501pp. doi:10.1088/1674-1056/27/2/028501 | ||
| Plain Text | Zhang, Meng-Ying, Hu, Zhi-Yuan, Bi, Da-Wei, Dai, Li-Hua, Zhang, Zheng-Xuan (2018) Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation. Chinese Physics B, 27. 28501pp. doi:10.1088/1674-1056/27/2/028501 | ||
| In | (n.d.) Chinese Physics B Vol. 27. IOP Publishing | ||
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