| Reference Type | Journal (article/letter/editorial) |
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| Title | Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors |
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| Journal | Chinese Physics B |
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| Authors | Wang, Li | Author |
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| Liu, Yuan | Author |
| Geng, Kui-Wei | Author |
| Chen, Ya-Yi | Author |
| En, Yun-Fei | Author |
| Year | 2018 (June) | Volume | 27 |
|---|
| Publisher | IOP Publishing |
|---|
| DOI | doi:10.1088/1674-1056/27/6/068504Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6009446 | Long-form Identifier | mindat:1:5:6009446:9 |
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|
| GUID | 0 |
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| Full Reference | Wang, Li, Liu, Yuan, Geng, Kui-Wei, Chen, Ya-Yi, En, Yun-Fei (2018) Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors. Chinese Physics B, 27. 68504pp. doi:10.1088/1674-1056/27/6/068504 |
|---|
| Plain Text | Wang, Li, Liu, Yuan, Geng, Kui-Wei, Chen, Ya-Yi, En, Yun-Fei (2018) Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors. Chinese Physics B, 27. 68504pp. doi:10.1088/1674-1056/27/6/068504 |
|---|
| In | (n.d.) Chinese Physics B Vol. 27. IOP Publishing |
|---|
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