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Luo, Jie, Wang, Tie-shan, Li, Dong-qing, Liu, Tian-qi, Hou, Ming-dong, Sun, You-mei, Duan, Jing-lai, Yao, Hui-jun, Xi, Kai, Ye, Bing, Liu, Jie (2018) Investigation of flux dependent sensitivity on single event effect in memory devices. Chinese Physics B, 27. 76101pp. doi:10.1088/1674-1056/27/7/076101

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of flux dependent sensitivity on single event effect in memory devices
JournalChinese Physics B
AuthorsLuo, JieAuthor
Wang, Tie-shanAuthor
Li, Dong-qingAuthor
Liu, Tian-qiAuthor
Hou, Ming-dongAuthor
Sun, You-meiAuthor
Duan, Jing-laiAuthor
Yao, Hui-junAuthor
Xi, KaiAuthor
Ye, BingAuthor
Liu, JieAuthor
Year2018 (July)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/7/076101Search in ResearchGate
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Mindat Ref. ID6009497Long-form Identifiermindat:1:5:6009497:3
GUID0
Full ReferenceLuo, Jie, Wang, Tie-shan, Li, Dong-qing, Liu, Tian-qi, Hou, Ming-dong, Sun, You-mei, Duan, Jing-lai, Yao, Hui-jun, Xi, Kai, Ye, Bing, Liu, Jie (2018) Investigation of flux dependent sensitivity on single event effect in memory devices. Chinese Physics B, 27. 76101pp. doi:10.1088/1674-1056/27/7/076101
Plain TextLuo, Jie, Wang, Tie-shan, Li, Dong-qing, Liu, Tian-qi, Hou, Ming-dong, Sun, You-mei, Duan, Jing-lai, Yao, Hui-jun, Xi, Kai, Ye, Bing, Liu, Jie (2018) Investigation of flux dependent sensitivity on single event effect in memory devices. Chinese Physics B, 27. 76101pp. doi:10.1088/1674-1056/27/7/076101
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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