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Li, Cong, Yan, Zhi-Rui, Zhuang, Yi-Qi, Zhao, Xiao-Long, Guo, Jia-Min (2018) Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. Chinese Physics B, 27. 78502pp. doi:10.1088/1674-1056/27/7/078502

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Reference TypeJournal (article/letter/editorial)
TitleGe/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
JournalChinese Physics B
AuthorsLi, CongAuthor
Yan, Zhi-RuiAuthor
Zhuang, Yi-QiAuthor
Zhao, Xiao-LongAuthor
Guo, Jia-MinAuthor
Year2018 (July)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/7/078502Search in ResearchGate
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Mindat Ref. ID6009534Long-form Identifiermindat:1:5:6009534:3
GUID0
Full ReferenceLi, Cong, Yan, Zhi-Rui, Zhuang, Yi-Qi, Zhao, Xiao-Long, Guo, Jia-Min (2018) Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. Chinese Physics B, 27. 78502pp. doi:10.1088/1674-1056/27/7/078502
Plain TextLi, Cong, Yan, Zhi-Rui, Zhuang, Yi-Qi, Zhao, Xiao-Long, Guo, Jia-Min (2018) Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. Chinese Physics B, 27. 78502pp. doi:10.1088/1674-1056/27/7/078502
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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Zhang, Wen-Hao, Li, Zun-Chao, Guan, Yun-He, Zhang, Ye-Fei (2017) Double-gate-all-around tunnel field-effect transistor. Chinese Physics B, 26. 78502pp. doi:10.1088/1674-1056/26/7/078502
Jiang, Zhi, Zhuang, Yi-Qi, Li, Cong, Wang, Ping, Liu, Yu-Qi (2016) Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor. Chinese Physics B, 25. 27701pp. doi:10.1088/1674-1056/25/2/027701
Chen, Hai-Feng, Guo, Li-Xin, Zheng, Pu-Yang, Dong, Zhao, Zhang, Qian (2015) Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor. Chinese Physics B, 24. 78502pp. doi:10.1088/1674-1056/24/7/078502
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Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate. Chinese Physics B, 23. 18501pp. doi:10.1088/1674-1056/23/1/018501
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Bao, Jun-Lin (2012) Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric. Chinese Physics B, 21. 48501pp. doi:10.1088/1674-1056/21/4/048501
Ma, Ming, Chen, Yan, Cui, Yi-Min (2018) Effect of oxygen content on dielectric characteristics of Cr-doped LaTiO x. Chinese Physics B, 27. 57702pp. doi:10.1088/1674-1056/27/5/057702
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Zhang, Shuqin, Liang, Renrong, Wang, Jing, Tan, Zhen, Xu, Jun (2017) Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction. Chinese Physics B, 26. 18504pp. doi:10.1088/1674-1056/26/1/018504
 
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