Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Cheng, Li-Wen, Ma, Jian, Cao, Chang-Rui, Xu, Zuo-Zheng, Lan, Tian, Yang, Jin-Peng, Chen, Hai-Tao, Yu, Hong-Yan, Wu, Shu-Dong, Yao, Shun, Zeng, Xiang-Hua, Xu, Zai-Quan (2018) Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers. Chinese Physics B, 27. 88504pp. doi:10.1088/1674-1056/27/8/088504

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleImproved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers
JournalChinese Physics B
AuthorsCheng, Li-WenAuthor
Ma, JianAuthor
Cao, Chang-RuiAuthor
Xu, Zuo-ZhengAuthor
Lan, TianAuthor
Yang, Jin-PengAuthor
Chen, Hai-TaoAuthor
Yu, Hong-YanAuthor
Wu, Shu-DongAuthor
Yao, ShunAuthor
Zeng, Xiang-HuaAuthor
Xu, Zai-QuanAuthor
Year2018 (August)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/8/088504Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6009634Long-form Identifiermindat:1:5:6009634:2
GUID0
Full ReferenceCheng, Li-Wen, Ma, Jian, Cao, Chang-Rui, Xu, Zuo-Zheng, Lan, Tian, Yang, Jin-Peng, Chen, Hai-Tao, Yu, Hong-Yan, Wu, Shu-Dong, Yao, Shun, Zeng, Xiang-Hua, Xu, Zai-Quan (2018) Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers. Chinese Physics B, 27. 88504pp. doi:10.1088/1674-1056/27/8/088504
Plain TextCheng, Li-Wen, Ma, Jian, Cao, Chang-Rui, Xu, Zuo-Zheng, Lan, Tian, Yang, Jin-Peng, Chen, Hai-Tao, Yu, Hong-Yan, Wu, Shu-Dong, Yao, Shun, Zeng, Xiang-Hua, Xu, Zai-Quan (2018) Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers. Chinese Physics B, 27. 88504pp. doi:10.1088/1674-1056/27/8/088504
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Cheng, Liwen, Cao, Changrui, Ma, Jian, Xu, Zuozheng, Lan, Tian, Yang, Jinpeng, Chen, Haitao, Yu, Hongyan, Wu, Shudong, Yao, Shun, Zeng, Xianghua (2018) Suppressed polarization effect and enhanced carrier confinement in InGaN light-emitting diodes with GaN/InGaN/GaN triangular barriers. Journal of Applied Physics, 123 (22). 223104pp. doi:10.1063/1.5027643
Wang, Tian-Hu, Xu, Jin-Liang (2013) Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer. Chinese Physics B, 22. 88504pp. doi:10.1088/1674-1056/22/8/088504
Gong, Chang-Chun, Fan, Guang-Han, Zhang, Yun-Yan, Xu, Yi-Qin, Liu, Xiao-Ping, Zheng, Shu-Wen, Yao, Guang-Rui, Zhou, De-Tao (2012) The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes. Chinese Physics B, 21. 68505pp. doi:10.1088/1674-1056/21/6/068505
Qiao, Liang, Ma, Zi-Guang, Chen, Hong, Wu, Hai-Yan, Chen, Xue-Fang, Yang, Hao-Jun, Zhao, Bin, He, Miao, Zheng, Shu-Wen, Li, Shu-Ti (2016) Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes. Chinese Physics B, 25. 107803pp. doi:10.1088/1674-1056/25/10/107803
Guo, Min, Guo, Zhi-You, Huang, Jing, Liu, Yang, Yao, Shun-Yu (2017) Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode. Chinese Physics B, 26. 28502pp. doi:10.1088/1674-1056/26/2/028502
Liu, Jun-Lin, Zhang, Jian-Li, Wang, Guang-Xu, Mo, Chun-Lan, Xu, Long-Quan, Ding, Jie, Quan, Zhi-Jue, Wang, Xiao-Lan, Pan, Shuan, Zheng, Chang-Da, Wu, Xiao-Ming, Fang, Wen-Qing, Jiang, Feng-Yi (2015) Status of GaN-based green light-emitting diodes. Chinese Physics B, 24. 67804pp. doi:10.1088/1674-1056/24/6/067804
Ding, Bin-Bin, Zhao, Fang, Song, Jing-Jing, Xiong, Jian-Yong, Zheng, Shu-Wen, Zhang, Yun-Yan, Xu, Yi-Qin, Zhou, De-Tao, Yu, Xiao-Peng, Zhang, Han-Xiang, Zhang, Tao, Fan, Guang-Han (2013) Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer. Chinese Physics B, 22. 88503pp. doi:10.1088/1674-1056/22/8/088503
Tian, Zhi-Feng, Xu, Peng, Yu, Yao, Sun, Jian-Dong, Feng, Wei, Ding, Qing-Feng, Meng, Zhan-Wei, Li, Xiang, Cai, Jin-Hua, Zheng, Zhong-Xin, Li, Xin-Xing, Jin, Lin, Qin, Hua, Sun, Yun-Fei (2019) Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures. Chinese Physics B, 28. 58501pp. doi:10.1088/1674-1056/28/5/058501
Tong, Jin-Hui, Li, Shu-Ti, Lu, Tai-Ping, Liu, Chao, Wang, Hai-Long, Wu, Le-Juan, Zhao, Bi-Jun, Wang, Xing-Fu, Chen, Xin (2012) Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers. Chinese Physics B, 21. 118502pp. doi:10.1088/1674-1056/21/11/118502
Zhang, Tao, Li, Ruo-Han, Su, Kai, Su, Hua-Ke, Lv, Yue-Guang, Xu, Sheng-Rui, Zhang, Jin-Cheng, Hao, Yue (2023) Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes. Chinese Physics B, 32 (8) IOP Publishing. 87301 doi:10.1088/1674-1056/acbded
Tong, Jin-Hui, Zhao, Bi-Jun, Wang, Xing-Fu, Chen, Xin, Ren, Zhi-Wei, Li, Dan-Wei, Zhuo, Xiang-Jing, Zhang, Jun, Yi, Han-Xiang, Li, Shu-Ti (2013) Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers. Chinese Physics B, 22. 68505pp. doi:10.1088/1674-1056/22/6/068505
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 04:41:39
Go to top of page