Zhang, Sheng, Wei, Ke, Xiao, Yang, Ma, Xiao-Hua, Zhang, Yi-Chuan, Liu, Guo-Guo, Lei, Tian-Min, Zheng, Ying-Kui, Huang, Sen, Wang, Ning, Asif, Muhammad, Liu, Xin-Yu (2018) Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs. Chinese Physics B, 27. 97309pp. doi:10.1088/1674-1056/27/9/097309
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs | ||
| Journal | Chinese Physics B | ||
| Authors | Zhang, Sheng | Author | |
| Wei, Ke | Author | ||
| Xiao, Yang | Author | ||
| Ma, Xiao-Hua | Author | ||
| Zhang, Yi-Chuan | Author | ||
| Liu, Guo-Guo | Author | ||
| Lei, Tian-Min | Author | ||
| Zheng, Ying-Kui | Author | ||
| Huang, Sen | Author | ||
| Wang, Ning | Author | ||
| Asif, Muhammad | Author | ||
| Liu, Xin-Yu | Author | ||
| Year | 2018 (September) | Volume | 27 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/27/9/097309Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6009712 | Long-form Identifier | mindat:1:5:6009712:9 |
| GUID | 0 | ||
| Full Reference | Zhang, Sheng, Wei, Ke, Xiao, Yang, Ma, Xiao-Hua, Zhang, Yi-Chuan, Liu, Guo-Guo, Lei, Tian-Min, Zheng, Ying-Kui, Huang, Sen, Wang, Ning, Asif, Muhammad, Liu, Xin-Yu (2018) Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs. Chinese Physics B, 27. 97309pp. doi:10.1088/1674-1056/27/9/097309 | ||
| Plain Text | Zhang, Sheng, Wei, Ke, Xiao, Yang, Ma, Xiao-Hua, Zhang, Yi-Chuan, Liu, Guo-Guo, Lei, Tian-Min, Zheng, Ying-Kui, Huang, Sen, Wang, Ning, Asif, Muhammad, Liu, Xin-Yu (2018) Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs. Chinese Physics B, 27. 97309pp. doi:10.1088/1674-1056/27/9/097309 | ||
| In | (n.d.) Chinese Physics B Vol. 27. IOP Publishing | ||
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